Works Published in 2003
Displaying all 6 works
Sorted by most recent date added to the index first, which may not be the same as publication date order.
2003 chapter
Kinetics of charge generation during formation of Hf and Zr silicate dielectrics
In Comos Front-End Materials and Process Technology (Vol. 765, pp. 79–84). http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000186232900011&KeyUID=WOS:000186232900011
Contributors: T. Gougousi, M. Kelly, G. Parsons , T. King, B. Yu, R. Lander, S. Saito
Source: ORCID
Added: June 22, 2023
2003 patent
High dielectric constant metal silicates formed by controlled metal-surface reactions
Washington, DC: U.S. Patent and Trademark Office.
Source: NC State University Libraries
Added: August 6, 2018
2003 article
Bonding and structure of ultrathin yttrium oxide films for Si field effect transistor gate dielectric applications
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 21, pp. 1792–1797.
Contributors: M. Ulrich n, J. Rowe n, D. Niu n & G. Parsons n
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018
2003 journal article
Chemical, physical, and electrical characterizations of oxygen plasma assisted chemical vapor deposited yttrium oxide on silicon
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 150(5), F102–F109.
Contributors: D. Niu n, R. Ashcraft n, Z. Chen *, S. Stemmer * & G. Parsons n
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018
2003 journal article
Properties of La-silicate high-K dielectric films formed by oxidation of La on silicon
JOURNAL OF APPLIED PHYSICS, 93(3), 1691–1696.
Contributors: T. Gougousi n, M. Kelly n, D. Terry n & G. Parsons n
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018
2003 journal article
Carbonate formation during post-deposition ambient exposure of high-k dielectrics
APPLIED PHYSICS LETTERS, 83(17), 3543–3545.
Contributors: T. Gougousi n, D. Niu n, R. Ashcraft n & G. Parsons n
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018
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