Center for Dielectrics and Piezoelectrics

Works Published in 1990

search works

Displaying all 7 works

Sorted by most recent date added to the index first, which may not be the same as publication date order.

1990 chapter

RAMAN-SCATTERING FROM MICROCRYSTALLINE FILMS - CONSIDERATIONS OF COMPOSITE STRUCTURES WITH DIFFERENT OPTICAL-ABSORPTION PROPERTIES

In Materials Issues in Microcrystalline Semiconductors (Vol. 164, pp. 265–270). http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:A1990BR31R00039&KeyUID=WOS:A1990BR31R00039

By: R. Nemanich, E. Buehler, Y. Legrice, R. Shroder, G. Parsons , C. Wang, G. Lucovsky, J. Boyce ...

Contributors: R. Nemanich, E. Buehler, Y. Legrice, R. Shroder, G. Parsons , C. Wang, G. Lucovsky, J. Boyce ...

gateway.webofknowledge.com
Source: ORCID
Added: June 22, 2023

1990 journal article

POSTDEPOSITION RELAXATION OF ELECTRONIC DEFECTS IN HYDROGENATED AMORPHOUS-SILICON

Applied Physics Letters, 56(19), 1895–1897.

By: G. Parsons n , C. Wang n, M. Williams n & G. Lucovsky n

Contributors: G. Parsons n , C. Wang n, M. Williams n & G. Lucovsky n

Source: ORCID
Added: June 22, 2023

1990 journal article

FORMATION OF SILICON-BASED HETEROSTRUCTURES IN MULTICHAMBER INTEGRATED-PROCESSING THIN-FILM DEPOSITION SYSTEMS

Journal of Vacuum Science &Amp; Technology a-Vacuum Surfaces and Films, 8(3), 1947–1954.

By: G. Lucovsky n, S. Kim n, D. Tsu n, G. Parsons n  & J. Fitch n

Contributors: G. Lucovsky n, S. Kim n, D. Tsu n, G. Parsons n  & J. Fitch n

Source: ORCID
Added: June 22, 2023

1990 journal article

ULTRAFAST RECOMBINATION AND TRAPPING IN AMORPHOUS-SILICON

Physical Review B, 41(5), 2879–2884.

By: A. Esser*, K. Seibert*, H. Kurz*, G. Parsons* , C. Wang *, B. Davidson*, G. Lucovsky*, R. Nemanich *

Contributors: A. Esser*, K. Seibert*, H. Kurz*, G. Parsons* , C. Wang *, B. Davidson*, G. Lucovsky*, R. Nemanich *

TL;DR: It is suggested that the process that dominates for the higher free-carrier densities may result from Auger recombination but with a dependence on the carrier density that is different from that which has been observed in crystalline semiconductors where k selection prevails. (via Semantic Scholar)
Sources: ORCID, NC State University Libraries, NC State University Libraries
Added: August 6, 2018

1990 journal article

SILICON-HYDROGEN BOND-STRETCHING VIBRATIONS IN HYDROGENATED AMORPHOUS SILICON-NITROGEN ALLOYS

Physical Review B, 41(3), 1664–1667.

By: G. Parsons n  & G. Lucovsky n

Contributors: G. Parsons n  & G. Lucovsky n

TL;DR: On demontre qu'un modele quantitatif, developpe pour decrire des deplacements inductifs des frequences de mode d'etirement de Si-H dans le systeme amorphe Si-O hydrogene peut etre aussi applique aux alliages silicium-azote hydrogenes. (via Semantic Scholar)
Sources: ORCID, NC State University Libraries, NC State University Libraries
Added: August 6, 2018

1990 journal article

Post-deposition relaxation of electronic defects in hydrogenated amorphous silicon

Applied Physics Letters, 56, 1895–1897.

By: G. Parsons , C. Wang & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1990 journal article

ANNEALING OF INTRINSIC AND PHOTOINDUCED DEFECTS IN HYDROGENATED AMORPHOUS-SILICON

THIN SOLID FILMS, 193(1-2), 577–587.

By: G. Parsons n , C. Wang  n & G. Lucovsky n

Contributors: G. Parsons n , C. Wang  n & G. Lucovsky n

Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018

Citation Index includes data from a number of different sources. If you have questions about the sources of data in the Citation Index or need a set of data which is free to re-distribute, please contact us.

Certain data included herein are derived from the Web of Science© and InCites© (2024) of Clarivate Analytics. All rights reserved. You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.