Displaying all 4 works
Sorted by most recent date added to the index first, which may not be the same as publication date order.
1996 chapter
Inert gas dilution and ion bombardment effects in room temperature (35 degrees C) plasma deposition of a-Si:H
In Amorphous Silicon Technology - 1996 (Vol. 420, pp. 399–404). http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:A1996BH07P00064&KeyUID=WOS:A1996BH07P00064
Contributors: E. Srinivasan, D. Lloyd, M. Fang, G. Parsons , M. Hack, E. Schiff, S. Wagner, R. Schropp, A. Matsuda
1996 journal article
Dynamic rate and thickness metrology during poly-Si rapid thermal chemical vapor deposition from SiH4 using real time in situ mass spectrometry (vol 14, pg 267, 1996)
Journal of Vacuum Science &Amp; Technology a-Vacuum Surfaces and Films, 14(4), 2680.
Contributors: L. Tedder n, G. Rubloff n, B. Conaghan* & G. Parsons n
1996 journal article
Dynamic rate and thickness metrology during poly-Si rapid thermal chemical vapor deposition from SiH4 using real time in situ mass spectrometry
Journal of Vacuum Science &Amp; Technology a-Vacuum Surfaces and Films, 14(2), 267–270.
Contributors: L. Tedder n, G. Rubloff n, B. Cohaghan* & G. Parsons n
1996 journal article
Ab initio calculation of hydrogen abstraction energetics from silicon hydrides
JOURNAL OF CHEMICAL PHYSICS, 105(13), 5467–5471.
Contributors: E. Srinivasan n, H. Yang n & G. Parsons n
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