Displaying all 15 works
Sorted by most recent date added to the index first, which may not be the same as publication date order.
1989 journal article
ULTRAFAST RECOMBINATION AND TRAPPING IN AMORPHOUS-SILICON
Journal of Non-Crystalline Solids, 114, 573–575.
Contributors: A. Esser, K. Seibert, H. Kurz, G. Parsons* , C. Wang, B. Davidson, G. Lucovsky, R. Nemanich
1989 journal article
REDUCTION OF DEFECTS BY HIGH-TEMPERATURE ANNEALING (150-DEGREES-C-240-DEGREES-C) IN HYDROGENATED AMORPHOUS-SILICON FILMS DEPOSITED AT ROOM-TEMPERATURE
Journal of Non-Crystalline Solids, 114, 178–180.
Contributors: G. Parsons n , C. Wang n, M. Williams n & G. Lucovsky n
1989 journal article
RAMAN-SCATTERING FROM MICROCRYSTALLINE SI FILMS - CONSIDERATIONS OF COMPOSITE STRUCTURES WITH DIFFERENT OPTICAL-ABSORPTION PROPERTIES
Journal of Non-Crystalline Solids, 114, 813–815.
Contributors: R. Nemanich n, E. Buehler n, Y. Legrice n, R. Shroder n, G. Parsons n , C. Wang n, G. Lucovsky n, J. Boyce*
1989 journal article
PRECURSORS FOR THE DEPOSITION OF AMORPHOUS-SILICON HYDROGEN ALLOYS BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION
Journal of Vacuum Science &Amp; Technology a-Vacuum Surfaces and Films, 7(3), 1124–1129.
Contributors: G. Parsons n , D. Tsu n, C. Wang n & G. Lucovsky n
1989 journal article
OPTICAL-EMISSION AND MASS SPECTROSCOPIC STUDIES OF THE GAS-PHASE DURING THE DEPOSITION OF SIO2 AND A-SI-H BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION
Journal of Vacuum Science &Amp; Technology a-Vacuum Surfaces and Films, 7(3), 1115–1123.
Contributors: D. Tsu n, G. Parsons n , G. Lucovsky n & M. Watkins n
1989 journal article
LOW-TEMPERATURE DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON (A-SI-H) - CONTROL OF POLYHYDRIDE INCORPORATION AND ITS EFFECTS ON THIN-FILM PROPERTIES
Solar Cells, 27(1-4), 121–136.
Contributors: G. Lucovsky n, G. Parsons n , C. Wang n, B. Davidson n & D. Tsu n
1989 journal article
INCORPORATION OF POLYHYDRIDE BONDING GROUPS INTO THIN-FILMS OF HYDROGENATED AMORPHOUS-SILICON (A-SI-H)
Journal of Non-Crystalline Solids, 114, 154–156.
Contributors: G. Lucovsky n, B. Davidson n, G. Parsons n & C. Wang n
1989 journal article
EFFECTS OF GAS ADDITIVES ON THE PROPERTIES OF A-SI-H FILMS
Journal of Non-Crystalline Solids, 114, 193–195.
Contributors: C. Wang n, G. Parsons n & G. Lucovsky n
1989 journal article
DEPENDENCE OF A-SI-H/SI3N4 INTERFACE PROPERTIES ON THE DEPOSITION SEQUENCE IN AMORPHOUS-SILICON THIN-FILM TRANSISTOR PRODUCED BY REMOTE PECVD PROCESS
Journal of Non-Crystalline Solids, 115(1-3), 69–71.
Contributors: S. Kim n, G. Parsons n , G. Fountain* & G. Lucovsky n
1989 journal article
DEFECTS IN A-SI-H FILMS PRODUCED BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION
Journal of Non-Crystalline Solids, 107(2-3), 295–300.
Contributors: G. Parsons* , D. Tsu & G. Lucovsky
1989 journal article
Reduction of defects by high temperature (180 degrees c-240 degrees c) annealing in room temperature deposited hydrogenated amorphous silicon
Journal of Non-Crystalline Solids, 114.
1989 journal article
Precursors for the deposition of amorphous silicon hydrogen alloys by remote plasma enhanced CVD
Journal of Vacuum Science & Technology, A(7), 1124–1129.
1989 journal article
Mass and optical emission spectroscopic studies of the gas phase during the deposition of SiO2 and a-Si:H by remote plasma enhanced chemical vapor deposition
Journal of Vacuum Science & Technology, A(7), 1115–1123.
1989 journal article
Dependence of the chemical, electrical and photoelectronic properties of a-Si:H/Si3N4 interfaces on the deposition sequence
Journal of Non-Cyrstalline Solids, 114.
1989 journal article
Defects in a-Si:H films produced by remote plasma enhanced CVD
Journal of Non-Crystalline Solids, 107, 295–300.
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