Works Published in 2002
Displaying all 10 works
Sorted by most recent date added to the index first, which may not be the same as publication date order.
2002 chapter
Interface reactions during oxygen plasma assisted chemical vapor deposition of yttrium oxide on silicon
In Semiconductor Silicon 2002, Vols 1 and 2 (Vol. 2002, pp. 429–439). http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000180812100038&KeyUID=WOS:000180812100038
Contributors: D. Niu, R. Ashcraft, S. Stemmer, G. Parsons , H. Huff, L. Fabry, S. Kishino
Source: ORCID
Added: June 22, 2023
2002 journal article
Reactions of Y2O3 films with (001) Si substrates and with polycrystalline Si capping layers
APPLIED PHYSICS LETTERS, 81(4), 712–714.
Contributors: S. Stemmer *, D. Klenov*, Z. Chen *, D. Niu n, R. Ashcraft n & G. Parsons n
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018
2002 journal article
Electron energy-loss spectroscopy analysis of interface structure of yttrium oxide gate dielectrics on silicon
APPLIED PHYSICS LETTERS, 81(4), 676–678.
Contributors: D. Niu n, R. Ashcraft n, Z. Chen*, S. Stemmer * & G. Parsons n
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018
2002 journal article
The role of the OH species in high-k/polycrystalline silicon gate electrode interface reactions
APPLIED PHYSICS LETTERS, 80(23), 4419–4421.
Contributors: T. Gougousi n, M. Kelly n & G. Parsons n
UN Sustainable Development Goal Categories
6. Clean Water and Sanitation
(OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018
2002 journal article
Ab initio analysis of silyl precursor physisorption and hydrogen abstraction during low temperature silicon deposition
SURFACE SCIENCE, 496(3), 307–317.
Contributors: A. Gupta, H. Yang* & G. Parsons*
author keywords: ab initio quantum chemical methods and calculations; density functional calculations; models of surface chemical reactions
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018
2002 journal article
Effect of hydrogen on adsorbed precursor diffusion kinetics during hydrogenated amorphous silicon deposition
Applied Physics Letters, 80(13), 2356–2358.
Contributors: K. Bray n, A. Gupta n & G. Parsons n
Sources: NC State University Libraries, ORCID, NC State University Libraries
Added: August 6, 2018
2002 journal article
Surface transport kinetics in low-temperature silicon deposition determined from topography evolution
PHYSICAL REVIEW B, 65(3).
Contributors: K. Bray n & G. Parsons n
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018
2002 journal article
Elementary reaction schemes for physical and chemical vapor deposition of transition metal oxides on silicon for high-k gate dielectric applications
JOURNAL OF APPLIED PHYSICS, 91(9), 6173–6180.
Contributors: D. Niu n, R. Ashcraft n, M. Kelly n, J. Chambers*, T. Klein* & G. Parsons n
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018
2002 journal article
Water absorption and interface reactivity of yttrium oxide gate dielectrics on silicon
APPLIED PHYSICS LETTERS, 80(19), 3575–3577.
Contributors: D. Niu n, R. Ashcraft n & G. Parsons n
UN Sustainable Development Goal Categories
6. Clean Water and Sanitation
(OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018
2002 journal article
Issues in high-kappa gate stack interfaces
MRS BULLETIN, 27(3), 212–216.
Contributors: V. Misra* , G. Lucovsky* & G. Parsons*
author keywords: gate stacks; high-dielectric-constant materials; high-kappa dielectrics; interface reactions; metal gates
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018
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