Works Published in 1992
Displaying all 3 works
Sorted by most recent date added to the index first, which may not be the same as publication date order.
1992 article
SELECTIVE DEPOSITION AND BOND STRAIN RELAXATION IN SILICON PECVD USING TIME MODULATED SILANE FLOW
PARSONS, G. N., BOLAND, J. J., & TSANG, J. C. (1992, June). JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Vol. 31, pp. 1943–1947.
Contributors: G. Parsons* , J. Boland * & J. Tsang*
author keywords: PLASMA ENHANCED DEPOSITION; TIME MODULATED GAS FLOW; MICROCRYSTALLINE SILICON; POLYCRYSTALLINE SILICON; SELECTIVE SILICON DEPOSITION; CRYSTALLITE FORMATION; BOND STRAIN RELAXATION; HYDROGEN SILICON INTERACTIONS; RAMAN SPECTROSCOPY; SCANNING TUNNELING MICROSCOPY
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018
1992 journal article
ENHANCED MOBILITY TOP-GATE AMORPHOUS-SILICON THIN-FILM TRANSISTOR WITH SELECTIVELY DEPOSITED SOURCE DRAIN CONTACTS
IEEE ELECTRON DEVICE LETTERS, 13(2), 80–82.
Contributors: G. Parsons*
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018
1992 journal article
BOND SELECTIVITY IN SILICON FILM GROWTH
SCIENCE, 256(5061), 1304–1306.
Contributors: J. Boland * & G. Parsons*
TL;DR:
The evolution of the film structure during hydrogen exposure is directly observed by scanning tunneling microscopy, and a model describing the role of hydrogen is presented.
(via Semantic Scholar)
UN Sustainable Development Goal Categories
10. Reduced Inequalities
(OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018
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