Physics

Dielectric function and bowing parameter of Zn1-xMgxSe and Zn1-xBexSe alloys

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 37(6), 1012–1016.

Covariant field theory on frame bundles of fibered manifolds

JOURNAL OF MATHEMATICAL PHYSICS, 41(10), 6808–6823.

Coherent optical phonon generation by the electric current in quantum wells

APPLIED PHYSICS LETTERS, 77(25), 4178–4180.

Charge redistribution at GaN-Ga2O3 interfaces: a microscopic mechanism for low defect density interfaces in remote-plasma-processed MOS devices prepared on polar GaN faces

Therrien, R., Lucovsky, G., & Davis, R. (2000, October 9). APPLIED SURFACE SCIENCE, Vol. 166, pp. 513–519.

A broadband X-ray study of supernova remnant 3C 397

ASTROPHYSICAL JOURNAL, 545(2), 922–938.

Time-temperature superposition of phase separating polymer blend films

Winesett, D. A., Zhu, S., Sokolov, J., Rafailovich, M., & Ade, H. (2000, December). HIGH PERFORMANCE POLYMERS, Vol. 12, pp. 599–602.

Structure of complex atom and photoionization of lithium below Li+ 1s3s S-3 - art. no. 030701

Physical Review. A, 6103(3), 0701.

Scanning tunneling microscope measurements of the amplitude of vibration of a quartz crystal oscillator

JOURNAL OF APPLIED PHYSICS, 88(7), 4017–4021.

Plasma processed ultra-thin SiO2 interfaces far advanced silicon NMOS and PMOS devices: applications to Si-oxide Si oxynitride, Si-oxide Si nitride and Si-oxide transition metal oxide stacked gate dielectrics

Lucovsky, G., Yang, H. Y., Wu, Y., & Niimi, H. (2000, October 17). THIN SOLID FILMS, Vol. 374, pp. 217–227.

Orientation mediated self-assembled gallium phosphide islands grown on silicon

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 80(3), 555–572.

Limitations for aggressively scaled CMOS Si devices due to bond coordination constraints and reduced band offset energies at Si-high-k dielectric interfaces

Lucovsky, G., & Phillips, J. C. (2000, October 9). APPLIED SURFACE SCIENCE, Vol. 166, pp. 497–503.

Levitating beachballs

AMERICAN JOURNAL OF PHYSICS, 68(4), 388–389.

Internal loop/bulge and hairpin loop of the iron-responsive element of ferritin mRNA contribute to maximal iron regulatory protein 2 binding and translational regulation in the iso-iron-responsive element/iso-iron regulatory protein family

BIOCHEMISTRY, 39(20), 6235–6242.

Integrated heterostructures of group III-V nitride semiconductor materials including epitaxial ohmic contact comprising multiple quantum well

Washington, DC: U.S. Patent and Trademark Office.

Independent interface and bulk film contributions to reduction of tunneling currents in stacked oxide/nitride gate dielectrics with monolayer nitrided interfaces

Lucovsky, G., Niimi, H., Wu, Y., & Yang, H. (2000, June). APPLIED SURFACE SCIENCE, Vol. 159, pp. 50–61.

In situ monitoring of MOVPE growth by combined spectroscopic ellipsometry and reflectance-difference spectroscopy

Ebert, M., Bell, K. A., Yoo, S. D., Flock, K., & Aspnes, D. E. (2000, March 27). THIN SOLID FILMS, Vol. 364, pp. 22–27.

Formation of nano-crystalline Si by thermal annealing of SiOx, SiCx and SiOyCx amorphous alloys: model systems for advanced device processing

Journal of Non-Crystalline Solids, 266(2000 May), 1009–1014.

Charge and mass transfer in ice-ice collisions: Experimental observations of a mechanism in thunderstorm electrification

JOURNAL OF GEOPHYSICAL RESEARCH-ATMOSPHERES, 105(D8), 10185–10192.

Barrier layer model determined by XPS data for tunneling current reductions at monolayer nitrided Si-SiO(2) interfaces

Niimi, H., Yang, H. Y., Lucovsky, G., Keister, J. W., & Rowe, J. E. (2000, October 9). APPLIED SURFACE SCIENCE, Vol. 166, pp. 485–491.

Application of constraint theory to Si-dielectric interfaces in a-Si: H and poly-Si thin film transistors (TFTs)

Journal of Non-Crystalline Solids, 266(2000 May), 1335–1339.