Physics

Update on IMPEC: An integrated first-year Engineering curriculum at N.C. State University

Conference Proceedings. Washington, DC: ASEE.

Interactive journey through physics CD-ROM

Englewood Cliffs, NJ: Prentice-Hall.

Visualizing potential surfaces with a spreadsheet

Physics Teacher, 35(2), 95–97.

Energy of isolated systems at retarded times as the null limit of quasilocal energy

PHYSICAL REVIEW D, 55(4), 1977–1984.

Photoluminescence characteristics of GaN/InGaN/GaN quantum wells

Shmagin, I. K., Muth, J. F., Kolbas, R. M., Krishnankutty, S., Keller, S., Abare, A. C., … DenBaars, S. P. (1997, March). JOURNAL OF ELECTRONIC MATERIALS, Vol. 26, pp. 325–329.

Observation of lasing from photopumped InGaN/GaN heterostructures in an edge emitting configuration

JOURNAL OF APPLIED PHYSICS, 81(4), 2021–2023.

X-ray microscopy and NEXAFS spectroscopy of macrophase-separated random block copolymer/homopolymer blends

MACROMOLECULES, 30(3), 663–666.

Variation of GaN valence bands with biaxial stress and quantification of residual stress

APPLIED PHYSICS LETTERS, 70(15), 2001–2003.

Multilevel approaches toward monitoring and control of semiconductor epitaxy

Control of semiconductor surfaces and interfaces: Symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society Symposium proceedings, no. 448), 451–462.

Molecular theory of a charged particle in a polarizable nonpolar liquid

JOURNAL OF CHEMICAL PHYSICS, 106(11), 4707–4713.

Low pH chemical etch route for smooth H-terminated Si(100) and study of subsequent chemical stability

Environmental, safety, and health issues in IC production: Symposium held December 4-5, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society Symposium proceedings, no. 447), 191–196. Pittsburgh, PA: Materials Research Society.

Variation of GaN valence bands with biaxial stress: quantification of residual stress and impact on fundamental band parameters

III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society symposia proceedings ; v. 449), 781–786.

In-plane optical anisotropies of Al(x)Ga(1-x)N films in their regions of transparency

III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society symposia proceedings ; v. 449), 835–840.

Extended x-ray absorption fine structure study of mercury speciation in a flood plain soil

Paris: INRA Editions.

The role of hydrogen atoms in metastable defect formation at Si-SiO2 interfaces and in hydrogenated amorphous Si (a-Si:H)

Physica Status Solidi. A, Applications and Materials Science, 159(1997), 5–10.

Translational regulation of bioiron

In S. Silver & W. Walden (Eds.), Metal ions in gene regulation (pp. 131–156).

Plane shear waves in a fully saturated granular medium with velocity and stress controlled boundary conditions

INTERNATIONAL JOURNAL OF NON-LINEAR MECHANICS, 32(3), 489–503.

Correlation of morphology and electrical properties of nanoscale TiSi2 epitaxial islands on Si (001)

Yang, W., Jedema, F. J., Ade, H., & Nemanich, R. J. (1997, October 31). THIN SOLID FILMS, Vol. 308, pp. 627–633.

A VLA study of the expansion of Tycho's supernova remnant

ASTROPHYSICAL JOURNAL, 491(2), 816–828.

Physical conditions in NGC 6543

In H. J. Habing & H. J. G. L. M. Lamers (Eds.), Proceedings of the 180th Symposium of the International Astronomical Union, held in Groningen, The Netherlands, August 26-30, 1996 (Vol. 180, pp. 252–253).