Physics

Near-field optical spectroscopy: enhancing the light budget

Microscopy and Microanalysis, 3, 815.

Lens

In J. S. Rigden (Ed.), The Macmillan Encyclopedia of Physics. New York: Macmillan.

Driving the driven atom: Spectral signatures

Physical Review A, 56(6), R4381–R4384.

Intrinsically Irreversible Multiphoton Laser Gain Mechanisms

Physical Review Letters, 78(8), 1432–1435.

Fluorescence efficiencies of thin scintillating films in the extreme ultraviolet spectral region

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 132(3), 351–358. http://www.scopus.com/inward/record.url?eid=2-s2.0-0031268266&partnerID=MN8TOARS

Update on IMPEC: An integrated first-year Engineering curriculum at N.C. State University

Conference Proceedings. Washington, DC: ASEE.

Interactive journey through physics CD-ROM

Englewood Cliffs, NJ: Prentice-Hall.

Visualizing potential surfaces with a spreadsheet

Physics Teacher, 35(2), 95–97.

Energy of isolated systems at retarded times as the null limit of quasilocal energy

PHYSICAL REVIEW D, 55(4), 1977–1984.

Photoluminescence characteristics of GaN/InGaN/GaN quantum wells

Shmagin, I. K., Muth, J. F., Kolbas, R. M., Krishnankutty, S., Keller, S., Abare, A. C., … DenBaars, S. P. (1997, March). JOURNAL OF ELECTRONIC MATERIALS, Vol. 26, pp. 325–329.

Observation of lasing from photopumped InGaN/GaN heterostructures in an edge emitting configuration

JOURNAL OF APPLIED PHYSICS, 81(4), 2021–2023.

X-ray microscopy and NEXAFS spectroscopy of macrophase-separated random block copolymer/homopolymer blends

MACROMOLECULES, 30(3), 663–666.

Variation of GaN valence bands with biaxial stress and quantification of residual stress

APPLIED PHYSICS LETTERS, 70(15), 2001–2003.

Multilevel approaches toward monitoring and control of semiconductor epitaxy

Control of semiconductor surfaces and interfaces: Symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society Symposium proceedings, no. 448), 451–462.

Molecular theory of a charged particle in a polarizable nonpolar liquid

JOURNAL OF CHEMICAL PHYSICS, 106(11), 4707–4713.

Low pH chemical etch route for smooth H-terminated Si(100) and study of subsequent chemical stability

Environmental, safety, and health issues in IC production: Symposium held December 4-5, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society Symposium proceedings, no. 447), 191–196. Pittsburgh, PA: Materials Research Society.

Variation of GaN valence bands with biaxial stress: quantification of residual stress and impact on fundamental band parameters

III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society symposia proceedings ; v. 449), 781–786.

In-plane optical anisotropies of Al(x)Ga(1-x)N films in their regions of transparency

III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society symposia proceedings ; v. 449), 835–840.

Extended x-ray absorption fine structure study of mercury speciation in a flood plain soil

Paris: INRA Editions.

The role of hydrogen atoms in metastable defect formation at Si-SiO2 interfaces and in hydrogenated amorphous Si (a-Si:H)

Physica Status Solidi. A, Applications and Materials Science, 159(1997), 5–10.