Physics

Spins, parity, excitation energies, and octupole structure of an excited superdeformed band in Hg-194 and implications for identical bands

PHYSICAL REVIEW LETTERS, 79(21), 4100–4103.

Spectroscopic ellipsometric study of Zn(1-x)Mn(x)Te films grown on GaAs

Journal of the Korean Physical Society, 31(1), 202–205.

Reconfigurable optical properties in InGaN/GaN quantum wells

APPLIED PHYSICS LETTERS, 71(11), 1455–1457.

Raman analysis of the configurational disorder in AlxGa1-xN films

APPLIED PHYSICS LETTERS, 71(15), 2157–2159.

Radiative proton capture to discrete states in N-31 at 98 and 176 MeV

NUCLEAR PHYSICS A, 621(3), 754–766.

Preliminary analysis of amphibian red cell M ferritin in a novel tetragonal unit cell

ACTA CRYSTALLOGRAPHICA SECTION D-STRUCTURAL BIOLOGY, 53, 513–523.

Li-7((p)over-right-arrow,gamma)Be-8 reaction at E-p=80-0 keV

PHYSICAL REVIEW C, 56(3), 1605–1612.

Evidence of near-surface localization of excited electronic states in crystalline Si

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 15, pp. 1196–1200.

Electrical and structural properties of zirconium germanosilicide formed by a bilayer solid state reaction of Zr with strained Si1-xGex alloys

JOURNAL OF APPLIED PHYSICS, 82(5), 2342–2348.

Determination of the gamma-ray background in a pulsed epithermal neutron beam

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 397(2-3), 365–370.

Comparison of electron affinity and Schottky barrier height of zirconium and copper-diamond interfaces

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 15, pp. 1236–1240.

Characterization of carbon supported Pt/Ru alloy particles using EXAFS spectroscopy

Pandya, K. I., Anderson, E. B., Sayers, D. E., & OGrady, W. E. (1997, April). JOURNAL DE PHYSIQUE IV, Vol. 7, pp. 955–956.

An integrated growth and analysis system for in-situ XAS studies of metal-semiconductor interactions

Wang, Z., Goeller, P. T., Boyanov, B. I., Sayers, D. E., & Nemanich, R. J. (1997, April). JOURNAL DE PHYSIQUE IV, Vol. 7, pp. 561–564.

Above bandgap dielectric function of epitaxial ZnSe layers

Journal of the Korean Physical Society, 31(4), L553–555.

Tidal mass transfer in elliptical-orbit binary stars

New Astronomy, 3(2), 111–119.

The decay-out of superdeformed bands in the A=190 region: What have we learned?

Acta Physica Hungarica. New Series, Heavy Ion Physics, 6(1-4), 229–240.

Surface preparation of ZnSe substrates for MBE growth of II-VI light emitters

Hughes, W. C., Boney, C., Johnson, M. A. L., Cook, J. W., & Schetzina, J. F. (1997, May). JOURNAL OF CRYSTAL GROWTH, Vol. 175, pp. 546–551.

Strain effects on the interface properties of nitride semiconductors

PHYSICAL REVIEW B, 55(12), R7323–R7326.

Spectroscopic ellipsometry study of GaAs/AlAs superlattices and Al(0.5)Ga(0.5)As alloy

Journal of the Korean Physical Society, 30(suppl.), 108–112.

Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 50(1-3), 134–141.