Materials Science and Engineering

Deposition and doping of silicon carbide by gas-source molecular beam epitaxy

APPLIED PHYSICS LETTERS, 71(10), 1356–1358.

Critical temperature and ion flux dependence of amorphization in GaAs

JOURNAL OF APPLIED PHYSICS, 81(11), 7681–7683.

Complex phase behavior of a disordered ''random'' diblock copolymer in the presence of a parent homopolymer

LANGMUIR, 13(8), 2250–2258.

Atomistic simulations of the nanometer-scale indentation of amorphous-carbon thin films

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 15, pp. 936–940.

Spectroscopic ellipsometric characterization of undoped ZnTe films grown on GaAs

APPLIED PHYSICS LETTERS, 70(5), 610–612.

Role of silver doping in oxygen incorporation of oxide thin film

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 45(1-3), 55–58.

MBE growth and properties of GaN on GaN/SiC substrates

Johnson, M. A. L., Fujita, S., Rowland, W. H., Bowers, K. A., Hughes, W. C., He, Y. W., … Edmond, J. A. (1997, February). SOLID-STATE ELECTRONICS, Vol. 41, pp. 213–218.

Local dipole field contributions to bond-stretching silicon-hydrogen vibrational modes on flat and vicinal Si(111) surfaces

Yang, H. Y., & Lucovsky, G. (1997, October). SURFACE REVIEW AND LETTERS, Vol. 4, pp. 891–896.

Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy

Applied Physics Letters, 71(18), 2698–2640.

Investigation of substrate dependent nucleation of plasma-deposited microcrystalline silicon on glass and silicon substrates using atomic force microscopy

JOURNAL OF APPLIED PHYSICS, 82(12), 6041–6046.

Influence of a surface film on conducting particles on the electrorheological response with alternating current fields

JOURNAL OF APPLIED PHYSICS, 81(12), 8057–8063.

Hydrogen elimination and phase transitions in pulsed-gas plasma deposition of amorphous and microcrystalline silicon

JOURNAL OF APPLIED PHYSICS, 81(6), 2847–2855.

Growth, doping and characterization of AlxGa1-xN thin film alloys on 6H-SiC(0001) substrates

Bremser, M. D., Perry, W. G., Zheleva, T., Edwards, N. V., Nam, O. H., Parikh, N., … Davis, R. F. (1997, March). DIAMOND AND RELATED MATERIALS, Vol. 6, pp. 196–201.

Growth of GaN and Al0.2Ga0.8N on patterened substrates via organometallic vapor phase epitaxy

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 36(5A), L532–L535.

Giant magnetoresistance and non-ohmic effects in La0.6Y0.07Ca0.33MnOx thin films

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 45(1-3), 122–125.

Field emission enhancement from Mo tip emitters coated with N containing amorphous diamond films

Surface & Coatings Technology, 94(1-3), 672–675.

Evolution of VIMS at North Carolina State University

Journal of Materials Education, 19(1-2), 59.

Energy distribution of field emitted electrons from diamond coated molybdenum tips

APPLIED PHYSICS LETTERS, 70(12), 1596–1598.

Electroplastic effect in cast polycrystalline NaCl with various orientations of the electric field

Journal of the American Ceramic Society, 80(6), 1389–1396.

Electron field emission from amorphous carbon-cesium alloys

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 15, pp. 1729–1732.