Works Published in 2006
Displaying works 61 - 80 of 305 in total
Sorted by most recent date added to the index first, which may not be the same as publication date order.
2006 journal article
Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates
Journal of Applied Physics, 100(10), 103511.
co-author countries:
Germany 🇩🇪 Sweden 🇸🇪 United States of America 🇺🇸
Source: Crossref
Added: August 28, 2020
2006 journal article
High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire
Applied Physics Letters, 89(5), 051914.
co-author countries:
Germany 🇩🇪 Sweden 🇸🇪 United States of America 🇺🇸
semanticscholar.org (repository)
Source: Crossref
Added: August 28, 2020
2006 journal article
Effect of high-temperature annealing on the residual strain and bending of freestanding GaN films grown by hydride vapor phase epitaxy
Applied Physics Letters, 88(14), 141909.
co-author countries:
Germany 🇩🇪 Poland 🇵🇱 Sweden 🇸🇪
Source: Crossref
Added: August 28, 2020
2006 journal article
Thermal stability of in-grown vacancy defects in GaN grown by hydride vapor phase epitaxy
Journal of Applied Physics, 99(6), 066105.
co-author countries:
Finland 🇫🇮 Poland 🇵🇱 Sweden 🇸🇪
Source: Crossref
Added: August 28, 2020
2006 journal article
Optical properties of nonpolar -plane GaN layers
Superlattices and Microstructures, 40(4-6), 253–261.
co-author countries:
Germany 🇩🇪 Sweden 🇸🇪 United States of America 🇺🇸
author keywords: GaN; photoluminescence; cathodoluminescence; structural defects
Source: Crossref
Added: August 28, 2020
2006 journal article
Time-resolved spectroscopy of excitons bound at shallow neutral donors in HVPE GaN
Physica B: Condensed Matter, 376-377, 482–485.
co-author countries:
Lithuania 🇱🇹 Sweden 🇸🇪
author keywords: GaN; HVPE; exciton; donor; acceptor
Source: Crossref
Added: August 28, 2020
2006 journal article
Structural defect-related emissions in nonpolar a-plane GaN
Physica B: Condensed Matter, 376-377, 473–476.
co-author countries:
Germany 🇩🇪 Lithuania 🇱🇹 Sweden 🇸🇪
author keywords: nonpolar GaN; photolummescence; stacking faults
Source: Crossref
Added: August 28, 2020
2006 journal article
Optical signatures of dopants in GaN
Materials Science in Semiconductor Processing, 9(1-3), 168–174.
co-author countries:
Germany 🇩🇪 Japan 🇯🇵 Russian Federation 🇷🇺 Sweden 🇸🇪
author keywords: GaN; HVPE; exciton; donor; acceptor
Source: Crossref
Added: August 28, 2020
2006 journal article
Photoluminescence ofa -plane GaN: comparison between MOCVD and HVPE grown layers
Physica Status Solidi (c), 3(6), 1499–1502.
co-author countries:
Germany 🇩🇪 Lithuania 🇱🇹 Norway 🇳🇴 Sweden 🇸🇪 United States of America 🇺🇸
Source: Crossref
Added: August 28, 2020
2006 journal article
Bending in HVPE GaN free-standing films: effects of laser lift-off, polishing and high-pressure annealing
Physica Status Solidi (c), 3(6), 1475–1478.
co-author countries:
Germany 🇩🇪 Poland 🇵🇱 Sweden 🇸🇪
Source: Crossref
Added: August 28, 2020
2006 journal article
The dominant shallow 0.225 eV acceptor in GaN
Physica Status Solidi (b), 243(7), 1604–1608.
co-author countries:
Germany 🇩🇪 Sweden 🇸🇪
Source: Crossref
Added: August 28, 2020
2006 journal article
Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry ona-plane GaN
Physica Status Solidi (b), 243(7), 1594–1598.
co-author countries:
Germany 🇩🇪 Sweden 🇸🇪 United States of America 🇺🇸
Source: Crossref
Added: August 28, 2020
2006 journal article
Dissociation of VGa–ON complexes in HVPE GaN by high pressure and high temperature annealing
Physica Status Solidi (b), 243(7), 1436–1440.
co-author countries:
Finland 🇫🇮 Poland 🇵🇱 Sweden 🇸🇪 United States of America 🇺🇸
Source: Crossref
Added: August 28, 2020
2006 journal article
Electron concentration and mobility profiles in InN layers grown by MBE
Physica Status Solidi (a), 203(7), 1681–1685.
co-author countries:
Bulgaria 🇧🇬 Sweden 🇸🇪 United States of America 🇺🇸
Source: Crossref
Added: August 28, 2020
2006 journal article
Optimizing Photo-Embossed Gratings: A Gradient Library Approach
Journal of Combinatorial Chemistry, 8(2), 228–236.
co-author countries:
Netherlands 🇳🇱
MeSH headings : Calorimetry, Differential Scanning; Combinatorial Chemistry Techniques / methods; Indicators and Reagents; Photochemistry; Polymethacrylic Acids / chemistry
Sources: Crossref, ORCID
Added: August 28, 2020
2006 conference paper
A practical operation strategy for STATCOM under single line to ground faults in the power system
2006 IEEE PES Power Systems Conference and Exposition, PSCE 2006 - Proceedings, 877–883.
Contributors: S. Bhattacharya n & Z. Xi
author keywords: STATCOM; Voltage Source Converter (VSC); Pulse-Width Modulation (PWM); single line to ground
Source: ORCID
Added: August 9, 2020
2006 conference paper
Single phase, full bridge, Controlled Capacitor Charging (CCC) type inverter
Proceedings of the IEEE International Conference on Industrial Technology, 265–270.
co-author countries:
India 🇮🇳 United States of America 🇺🇸
Contributors: S. Dalapati *, C. Chakraborty * & S. Bhattacharya n
Source: ORCID
Added: August 9, 2020
2006 conference paper
STATCOM impact study on the integration of a large wind farm into a weak loop power system
2006 IEEE PES Power Systems Conference and Exposition, PSCE 2006 - Proceedings, 1266–1272.
co-author countries:
United States of America 🇺🇸
Contributors: C. Han n, A. Huang n, M. Baran n, S. Bhattacharya n , W. Litzenberger*, L. Anderson*, A. Johnson*, A. Edris*
author keywords: STATCOM; wind farm; voltage fluctuation; voltage stability; impact study
Source: ORCID
Added: August 9, 2020
2006 conference paper
An optimal combination modulation strategy for a seven-level cascade multilevel converter based STATCOM
Conference Record - IAS Annual Meeting (IEEE Industry Applications Society), 4, 1732–1737.
co-author countries:
United States of America 🇺🇸
Contributors: Y. Liu n, Z. Du n, A. Huang n & S. Bhattacharya n
Source: ORCID
Added: August 9, 2020
2006 conference paper
Electro-thermal design of a heat pipe based high power voltage source converter using emitter turn-off thyristor
Conference Record - IAS Annual Meeting (IEEE Industry Applications Society), 2, 785–790.
Contributors: K. Tewari, S. Doss, B. Chen, A. Huang, S. Bhattacharya* & Z. Du
Source: ORCID
Added: August 9, 2020
