Electrical and Computer Engineering

Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates

Journal of Applied Physics, 100(10), 103511.

High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire

Applied Physics Letters, 89(5), 051914.

Effect of high-temperature annealing on the residual strain and bending of freestanding GaN films grown by hydride vapor phase epitaxy

Applied Physics Letters, 88(14), 141909.

Thermal stability of in-grown vacancy defects in GaN grown by hydride vapor phase epitaxy

Journal of Applied Physics, 99(6), 066105.

Optical properties of nonpolar -plane GaN layers

Superlattices and Microstructures, 40(4-6), 253–261.

Time-resolved spectroscopy of excitons bound at shallow neutral donors in HVPE GaN

Physica B: Condensed Matter, 376-377, 482–485.

Structural defect-related emissions in nonpolar a-plane GaN

Physica B: Condensed Matter, 376-377, 473–476.

Optical signatures of dopants in GaN

Materials Science in Semiconductor Processing, 9(1-3), 168–174.

Photoluminescence ofa -plane GaN: comparison between MOCVD and HVPE grown layers

Physica Status Solidi (c), 3(6), 1499–1502.

Bending in HVPE GaN free-standing films: effects of laser lift-off, polishing and high-pressure annealing

Physica Status Solidi (c), 3(6), 1475–1478.

The dominant shallow 0.225 eV acceptor in GaN

Physica Status Solidi (b), 243(7), 1604–1608.

Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry ona-plane GaN

Physica Status Solidi (b), 243(7), 1594–1598.

Dissociation of VGa–ON complexes in HVPE GaN by high pressure and high temperature annealing

Physica Status Solidi (b), 243(7), 1436–1440.

Electron concentration and mobility profiles in InN layers grown by MBE

Physica Status Solidi (a), 203(7), 1681–1685.

Optimizing Photo-Embossed Gratings:  A Gradient Library Approach

Journal of Combinatorial Chemistry, 8(2), 228–236.

A practical operation strategy for STATCOM under single line to ground faults in the power system

2006 IEEE PES Power Systems Conference and Exposition, PSCE 2006 - Proceedings, 877–883.

Single phase, full bridge, Controlled Capacitor Charging (CCC) type inverter

Proceedings of the IEEE International Conference on Industrial Technology, 265–270.

STATCOM impact study on the integration of a large wind farm into a weak loop power system

2006 IEEE PES Power Systems Conference and Exposition, PSCE 2006 - Proceedings, 1266–1272.

An optimal combination modulation strategy for a seven-level cascade multilevel converter based STATCOM

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society), 4, 1732–1737.

Electro-thermal design of a heat pipe based high power voltage source converter using emitter turn-off thyristor

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society), 2, 785–790.