Electrical & Computer Engineering

Locality-based Information Redundancy for Processor Reliability

2nd Workshop on Architectural Reliability (WAR-2) held in conjunction with 39th International Symposium on Microarchitecture (MICRO-39), 29–36.

PMPM: Prediction by Combining Multiple Partial Matches

2nd Championship Branch Prediction (CBP-2) held with the 39th International Symposium on Microarchitecture (MICRO-39), 19–24.

Demonstration of electron filtering to increase the Seebeck coefficient in In0.53Ga0.47As∕In0.53Ga0.28Al0.19As superlattices

Physical Review B, 74(20), 205335.

Strain ina-plane GaN layers grown onr-plane sapphire substrates

Physica Status Solidi (a), 203(7), 1672–1675.

P3R-6 A Lumped Circuit Model for the Mutual Radiation Impedance of Acoustic Array Elements

2006 IEEE Ultrasonics Symposium.

Characterization of silicon nitride micromachined beams via remote optical interrogation

IEEE/LEOS International Conference on Optical MEMS and Their Applications Conference, 2006, 138–139.

A Novel dynamically reconfigurable logic block based on CHAOS

IFAC Proceedings Volumes, 39(21), 372–377.

Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates

Journal of Applied Physics, 100(10), 103511.

High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire

Applied Physics Letters, 89(5), 051914.

Effect of high-temperature annealing on the residual strain and bending of freestanding GaN films grown by hydride vapor phase epitaxy

Applied Physics Letters, 88(14), 141909.

Thermal stability of in-grown vacancy defects in GaN grown by hydride vapor phase epitaxy

Journal of Applied Physics, 99(6), 066105.

Optical properties of nonpolar -plane GaN layers

Superlattices and Microstructures, 40(4-6), 253–261.

Time-resolved spectroscopy of excitons bound at shallow neutral donors in HVPE GaN

Physica B: Condensed Matter, 376-377, 482–485.

Structural defect-related emissions in nonpolar a-plane GaN

Physica B: Condensed Matter, 376-377, 473–476.

Optical signatures of dopants in GaN

Materials Science in Semiconductor Processing, 9(1-3), 168–174.

Photoluminescence ofa -plane GaN: comparison between MOCVD and HVPE grown layers

Physica Status Solidi (c), 3(6), 1499–1502.

Bending in HVPE GaN free-standing films: effects of laser lift-off, polishing and high-pressure annealing

Physica Status Solidi (c), 3(6), 1475–1478.

The dominant shallow 0.225 eV acceptor in GaN

Physica Status Solidi (b), 243(7), 1604–1608.

Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry ona-plane GaN

Physica Status Solidi (b), 243(7), 1594–1598.

Dissociation of VGa–ON complexes in HVPE GaN by high pressure and high temperature annealing

Physica Status Solidi (b), 243(7), 1436–1440.