Electrical & Computer Engineering

Aluminum-Based High-Temperature (>200°C) Packaging for SiC Power Converters

Proceedings 2006 International Symposium on Microelectronics : October 8-12, 2006 : San Diego Convention Center, San Diego, Calif., 734–741. Washington, D.C.: IMAPS.

High-temperature, high-density packaging of a 60kW converter for >200/spl deg/C embedded operation

High-temperature, high-density packaging of a 60kW converter for >200/spl deg/C embedded operation. Twenty-First Annual IEEE Applied Power Electronics Conference and Exposition, 2006. APEC '06. Presented at the Twenty-First Annual IEEE Applied Power Electronics Conference and Exposition, 2006. APEC '06., Dallas, TX.

Experimental Study of Thermomigration in Lead-Free Nanoelectronics Solder Joints

Electronic and Photonic Packaging, Electrical Systems Design and Photonics, and Nanotechnology. Presented at the ASME 2006 International Mechanical Engineering Congress and Exposition.

Experimental Damage Mechanics of Micro/Power Electronics Solder Joints under Electric Current Stresses

International Journal of Damage Mechanics, 15(1), 41–67.

System and method for non-uniform cache in a multi-core processor

Hughes, C., Tuck, J., Lee, V., & Chen, Y.-kuang. (2006, June).

Boosting SMT trace processors performance with data cache misssensitive thread scheduling mechanism

Microprocessors and Microsystems, 30(5), 225–233.

Energy-efficient thread-level speculation

IEEE Micro, 26(1), 80–91.

Bulk disambiguation of speculative threads in multiprocessors

ACM SIGARCH Computer Architecture News, 34(2), 227–238.

Are we ready for high memorylevel parallelism?

4th Workshop on Memory Performance Issues.

Locality-based Information Redundancy for Processor Reliability

2nd Workshop on Architectural Reliability (WAR-2) held in conjunction with 39th International Symposium on Microarchitecture (MICRO-39), 29–36.

PMPM: Prediction by Combining Multiple Partial Matches

2nd Championship Branch Prediction (CBP-2) held with the 39th International Symposium on Microarchitecture (MICRO-39), 19–24.

Demonstration of electron filtering to increase the Seebeck coefficient in In0.53Ga0.47As∕In0.53Ga0.28Al0.19As superlattices

Physical Review B, 74(20), 205335.

Strain ina-plane GaN layers grown onr-plane sapphire substrates

Physica Status Solidi (a), 203(7), 1672–1675.

P3R-6 A Lumped Circuit Model for the Mutual Radiation Impedance of Acoustic Array Elements

2006 IEEE Ultrasonics Symposium.

Characterization of silicon nitride micromachined beams via remote optical interrogation

IEEE/LEOS International Conference on Optical MEMS and Their Applications Conference, 2006, 138–139.

A Novel dynamically reconfigurable logic block based on CHAOS

IFAC Proceedings Volumes, 39(21), 372–377.

Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates

Journal of Applied Physics, 100(10), 103511.

High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire

Applied Physics Letters, 89(5), 051914.

Effect of high-temperature annealing on the residual strain and bending of freestanding GaN films grown by hydride vapor phase epitaxy

Applied Physics Letters, 88(14), 141909.

Thermal stability of in-grown vacancy defects in GaN grown by hydride vapor phase epitaxy

Journal of Applied Physics, 99(6), 066105.