Materials Science & Engineering

College of Engineering

Works Published in 2000

Sorted by most recent date added to the index first, which may not be the same as publication date order.

2000 journal article

SiC MISFETs with MBE-grown AlN gate dielectric

Materials Science Forum, 338(3), 1315–1318.

By: C. Zetterling, M. Ostling, H. Yano, T. Kimoto, H. Matsunami, K. Linthicum, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2000 patent

Optoelectronic and microelectronic devices including cubic ZnMgO and/or CdMgO alloys

Washington, DC: U.S. Patent and Trademark Office.

Source: NC State University Libraries
Added: August 6, 2018

2000 patent

Method of reducing noise generated by arc lamps in optical systems employing slits

Washington, DC: U.S. Patent and Trademark Office.

By: D. Aspnes & M. Ebert

Source: NC State University Libraries
Added: August 6, 2018

2000 conference paper

Size effect in germanium nanostructures fabricated by pulsed laser deposition

Nanophase and Nanocomposite Materials III (Materials Research Society proceedings; vol. 581). Pittsburgh, Pa.: Materials Research Society.

Source: NC State University Libraries
Added: August 6, 2018

2000 conference paper

Quantum confinement of E1 and E2 transitions in Ge quantum dots embedded in Al203 or an AlN matrix

Optical microstructural characterization of semiconductors (Materials Research Society proceedings, vol. 588). Pittsburgh, Pa.: Materials Research Society.

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Low energy electron-excited nanoscale luminescence: A tool to detect trap activation by ionizing radiation

IEEE Transactions on Nuclear Science, 47(6), 2276–2280.

By: B. White, L. Brillson, S. Lee, D. Fleetwood, R. Schrimpf, S. Pantelides, Y. Lee, G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

2000 chapter

Scratching and healing investigations on self-assembled monolayers using Atomic Force Microscopy

In Microbeam Analysis 2000: proceedings of the Second Conference of the International Union of Microbeam Analysis Societies held in Kailua-Kona, Hawaii, 9-14 July 2000 (Vol. 165, pp. 367–368). Bristol: Institute of Physics Publishing.

By: B. Neves, M. Salmon, D. Leonard, E. Troughton & P. Russell

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Oxidation resistance of TaSiN diffusion barriers

Integrated Ferroelectrics, 31(1-4), 315–322.

By: F. Letendu, M. Hugon, J. Desvignes, B. Agius, I. Vickridge, D. Kim, A. Kingon

Source: NC State University Libraries
Added: August 6, 2018

2000 chapter

Environmental atomic force microscopy: Probing diblock polymer thin films and self-assembling molecules at various temperatures and pressures

In Microbeam Analysis 2000: proceedings of the Second Conference of the International Union of Microbeam Analysis Societies held in Kailua-Kona, Hawaii, 9-14 July 2000 (Vol. 165, pp. 389–390). Bristol: Institute of Physics Publishing.

Source: NC State University Libraries
Added: August 6, 2018

2000 chapter

Optimization of SIMS analysis conditions for ultra-shallow phosphorus and arsenic implants

In Microbeam Analysis 2000: proceedings of the Second Conference of the International Union of Microbeam Analysis Societies held in Kailua-Kona, Hawaii, 9-14 July 2000 (Vol. 165, pp. 327–328). Bristol: Institute of Physics Publishing.

By: J. Hunter, T. Bates, S. Patel, R. Loesing, G. Guraynov & D. Griffis

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

A multiple model cost-sensitive approach for intrusion detection

Machine Learning : ECML 2000, 1810(2000), 142–153.

By: W. Fan, W. Lee, S. Stolfo & M. Miller

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Visible-near ultraviolet ellipsometric study of Zn1-xMgxSe and Zn1-xBexSe alloys

Journal of Applied Physics, 88(2), 878–882.

By: H. Lee, I. Kim, J. Powell, D. Aspnes, S. Lee, F. Peiris, J. Furdyna

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2000 journal article

Real-time assessment of selected surface preparation regimens for 4H-SiC surfaces using spectroscopic ellipsometry

Surface Science, 464(1), L703–707.

By: N. Edwards, K. Jarrendahl, D. Aspnes, K. Robbie, G. Powell, C. Cobet, N. Esser, W. Richter, L. Madsen

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2000 journal article

Real-time assessment of over layer removal on 4H-SiC surfaces: Techniques and relevance to contact formation

Materials Science Forum, 338(3), 1033–1036.

By: N. Edwards, L. Madsen, K. Robbie, G. Powell, K. Jarrendahl, C. Cobet, N. Esser, W. Richter, D. Aspnes

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2000 journal article

Photo-emission electron microscopy (PEEM) of cleaned and etched 6H-SiC(0001)

Materials Science Forum, 338(3), 353–356.

By: J. Hartman, K. Naniwae, C. Petrich, V. Ramachandran, R. Feenstra, R. Nemanich, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Pendeo-epitaxy (TM) process for aluminum gallium nitride thin films on silicon carbide substrates via metalorganic chemical vapor deposition

Materials Science Forum, 338(3), 1491–1494.

By: T. Gehrke, K. Linthicum, P. Rajagopal, E. Preble, E. Carlson, B. Robin, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Microscopic model for enhanced dielectric constants in low concentration SiO2-rich noncrystalline Zr and Hf silicate alloys

Applied Physics Letters, 77(18), 2912–2914.

Source: NC State University Libraries
Added: August 6, 2018

2000 patent

Method for water vapor enhanced charged-particle-beam machining

Washington, DC: U.S. Patent and Trademark Office.

By: P. Russell, D. Griffis, G. Shedd, T. Stark & J. Vitarelli

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Lateral- and pendeo-epitaxial growth and defect reduction in GaN thin films

Materials Science Forum, 338(3), 1471–1476.

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Influence of annealing conditions on dopant activation of Si+ and Mg+ implanted GaN

Materials Science Forum, 338(3), 1615–1618.

By: A. Suvkhanov, N. Parikh, I. Usov, J. Hunn, S. Withrow, D. Thomson, T. Gehrke, R. Davis, L. Krasnobaev

Source: NC State University Libraries
Added: August 6, 2018