Materials Science and Engineering

Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures

APPLIED PHYSICS LETTERS, 77(6), 821–823.

Coherence effects and time dependences of the optical response of surfaces and interfaces of optically absorbing materials

Aspnes, D. E., Mantese, L., Bell, K. A., & Rossow, U. (2000, July). PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 220, pp. 709–715.

Alternative dielectrics to silicon dioxide for memory and logic devices

[Review of ]. NATURE, 406(6799), 1032–1038.

The performance and reliability of PMOSFET's with ultrathin silicon nitride/oxide stacked gate dielectrics with nitrided Si-SiO2 interfaces prepared by remote plasma enhanced CVD and post-deposition rapid thermal annealing

IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(7), 1361–1369.

Superhard diamondlike carbon: preparation, theory, and properties

[Review of ]. INTERNATIONAL MATERIALS REVIEWS, 45(4), 133–164.

Relaxation and leakage current characteristics of Pb1-xLax(ZryTi1-y)(1-x/4)O3 thin films with various Ir-based top electrodes

JOURNAL OF APPLIED PHYSICS, 88(11), 6690–6695.

Properties of polycrystalline diamond: Multiscale modeling approach

MOLECULAR SIMULATION, Vol. 24, pp. 197–207.

Novel simulation tools for materials engineering education

MOLECULAR SIMULATION, Vol. 25, pp. 121–130.

Nonequilibrium processing of polymeric materials by mechanical attrition

In H. S. J. Eckert & L. Schultz (Eds.), International Symposium on Metastable, Mechanically Alloyed and Nanocrystalline Materials (1999: Dresden, Germany): Vol. 343/346 (pp. 49–561). Utikon-Zurich, Switz.; Enfield, NH: Trans Tech Publications.

Nanoindentation as a probe of nanoscale residual stresses: Atomistic simulation results

MOLECULAR SIMULATION, Vol. 25, pp. 81-+.

Marine boundary-layer variability over the Indian Ocean during INDOEX (1998)

BOUNDARY-LAYER METEOROLOGY, 97(3), 411–430.

First principles prediction of gas-phase composition and substrate temperature for diamond film growth

MOLECULAR SIMULATION, Vol. 25, pp. 41–51.

Electrical properties of RuO2 gate electrodes for dual metal gate Si-CMOS

IEEE ELECTRON DEVICE LETTERS, 21(12), 593–595.

Dielectric function of epitaxial ZnSe films

APPLIED PHYSICS LETTERS, 77(21), 3364–3366.

Dielectric function and bowing parameter of Zn1-xMgxSe and Zn1-xBexSe alloys

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 37(6), 1012–1016.

Critical layer thickness determination of GaN/InGaN/GaN double heterostructures

Applied Physics Letters, 77(25), 4121–4123.

Comparative study of pulsed laser ablated plasma plumes from single crystal graphite and amorphous carbon targets. Part II. Electrostatic probe measurements

JOURNAL OF APPLIED PHYSICS, 88(11), 6868–6874.

Comparative study of pulsed laser ablated plasma plumes from single crystal graphite and amorphous carbon targets. Part I. Optical emission spectroscopy

JOURNAL OF APPLIED PHYSICS, 88(11), 6861–6867.

Charge redistribution at GaN-Ga2O3 interfaces: a microscopic mechanism for low defect density interfaces in remote-plasma-processed MOS devices prepared on polar GaN faces

Therrien, R., Lucovsky, G., & Davis, R. (2000, October 9). APPLIED SURFACE SCIENCE, Vol. 166, pp. 513–519.

An analytical model for magnetorheological fluids

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 33(23), 3026–3032.