Tsvetanka S. Zheleva (Jeleva)

Transition layers at the SiO2/SiC interface

Applied Physics Letters, 93(2).

Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches

Washington, DC: U.S. Patent and Trademark Office.

Second gallium nitride layers that extend into trenches in first gallium nitride layers

Washington, DC: U.S. Patent and Trademark Office.

Gallium nitride semiconductor structures including lateral gallium nitride layers

Washington, DC: U.S. Patent and Trademark Office.

Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth

Washington, DC: U.S. Patent and Trademark Office.

Lateral epitaxy and dislocation density reduction in selectively grown GaN structures

Zheleva, T. S., Nam, O.-H., Ashmawi, W. M., Griffin, J. D., & Davis, R. F. (2001, February 1). Journal of Crystal Growth.

Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

Pendeo-epitaxial growth and characterization of thin films of gallium nitride and related materials on SiC(0001) and si(111) substrates

Zeitschrift Fur MetallkundeAmerican Journal of Physiology, 92(2), 163–166.

Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization

Davis, R. F., Gehrke, T., Linthicum, K. J., Zheleva, T. S., Preble, E. A., Rajagopal, P., … Mehregany, M. (2001, May 1). Journal of Crystal Growth.

Review of pendeo-epitaxial growth and characterization of thin films of GaN and AlGaN alloys on 6H-SiC(0001) and Si(111) substrates

MRS Internet Journal of Nitride Semiconductor Research, 6(14), 1–16.

Lateral- and pendeo-epitaxial growth and defect reduction in GaN thin films

Materials Science Forum, 338(3), 1471–1476.

Pendeo-epitaxial growth and characterization of GaN and related materials on (6H-SiC(0001) and Si(111) substrates

MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U46–57.

Growth, doping and characterization of epitaxial thin films and patterned structures of AlN, GaN, and AlxGa1−xN

Hanser, A. D., Nam, O.-H., Bremser, M. D., Thomson, D. B., Gehrke, T., Zheleva, T. S., & Davis, R. F. (1999, March 1). Diamond and Related Materials.

Pendeo-epitaxy versus lateral epitaxial overgrowth of GaN: A comparative study via finite element analysis

Physica Status Solidi. A, Applications and Materials Science, 176(1), 545–551.

Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films

Pendeo-epitaxy: A new approach for lateral growth of gallium nitride structures

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.38).

Process routes for low defect-density GaN on various substrates employing pendeo-epitaxial growth techniques

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.9).

Room temperature growth of cubic boron nitride

Feldermann, H., Merk, R., Hofsäss, H., Ronning, C., & Zheleva, T. (1999, March 15). Applied Physics Letters.

Thermal mismatch stress relaxation via lateral epitaxy in selectively grown GaN structures

Zheleva, T. S., Ashmawi, W. M., Nam, O.-H., & Davis, R. F. (1999, April 26). Applied Physics Letters.

Analysis of reactor geometry and diluent gas flow effects on the metalorganic vapor phase epitaxy of AIN and GaN thin films on α(6H)-SiC substrates

Hanser, A. D., Wolden, C. A., Perry, W. G., Zheleva, T., Carlson, E. P., Banks, A. D., … Davis, R. F. (1998, April 1). Journal of Electronic Materials.

Biaxial strain in AlxGa1−xN/GaN layers deposited on 6H-SiC

Perry, W. G., Bremser, M. B., Zheleva, T., Linthicum, K. J., & Davis, R. F. (1998, July 1). Thin Solid Films.

Characterization of zirconium nitride coatings deposited by cathodic arc sputtering

Gruss, K. A., Zheleva, T., Davis, R. F., & Watkins, T. R. (1998, September 1). Surface and Coatings Technology.

Growth of highly (0001)-oriented aluminum nitride thin films with smooth surfaces on silicon carbide by gas-source molecular beam epitaxy

Järrendahl, K., Smith, S. A., Zheleva, T., Kern, R. S., & Davis, R. F. (1998, March 1). Vacuum.

Lateral epitaxial overgrowth of GaN films on SiO2 areas via metalorganic vapor phase epitaxy

Nam, O.-H., Zheleva, T. S., Bremser, M. D., & Davis, R. F. (1998, April 1). Journal of Electronic Materials.

Optical and structural properties of lateral epitaxial overgrown GaN layers

Journal of Crystal Growth, 190(1998 June), 92–96.

The formation of crystalline defects and crystal growth mechanism in InxGa1-xN/GaN heterostructure grown by metalorganic vapor phase epitaxy

Journal of Crystal Growth, 190(1998 June), 24–28.

Dislocation density reduction via lateral epitaxy in selectively grown GaN structures

Zheleva, T. S., Nam, O.-H., Bremser, M. D., & Davis, R. F. (1997, October 27). Applied Physics Letters.

Growth, doping and characterization of AlxGa1 − xN thin film alloys on 6H-SiC(0001) substrates

Bremser, M. D., Perry, W. G., Zheleva, T., Edwards, N. V., Nam, O. H., Parikh, N., … Davis, R. F. (1997, March 1). Diamond and Related Materials, Vol. 6, pp. 196–201.

Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy

Applied Physics Letters, 71(18), 2698–2640.

Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films

Edwards, N. V., Yoo, S. D., Bremser, M. D., Zheleva, T., Horton, M. N., Perkins, N. R., … Aspnes, D. E. (1997, December 1). Materials Science and Engineering B, Vol. 50, pp. 134–141.

Sublimation growth and characterization of bulk aluminum nitride single crystals

Balkaş, C. M., Sitar, Z., Zheleva, T., Bergman, L., Nemanich, R., & Davis, R. F. (1997, August 1). Journal of Crystal Growth.

The composition pulling effect in MOVPE grown InGaN on GaN and AlGaN and its TEM characterization

MRS Internet Journal of Nitride Semiconductor Research, 2(6).

Growth of bulk AIN and GaN single crystals by sublimation

III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society symposia proceedings ; v. 449), 41–46. Pittsburgh, Pa.: Materials Research Society.