Materials Science & Engineering

Deformation twin formed by self-thickening, cross-slip mechanism in nanocrystalline Ni

Applied Physics Letters, 93(3), 031910.

Vertical junction field effect transistor having an epitaxial gate

Washington, DC: U.S. Patent and Trademark Office.

Titanium Interlayer Mediated Epitaxy of CoSi2 on Si1-xGex

THIN SOLID FILMS, 516(8), 1809–1817.

Thermodynamics and kinetic processes of polymer blends and block copolymers in the presence of pressurized carbon dioxide

[Review of ]. ADVANCED MATERIALS, 20(5), 879–898.

Thermodynamic and kinetic study of transport and reaction phenomena in gallium nitride epitaxy growth

INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER, 51(5-6), 1264–1280.

The effect of water and guest hydrophobicity on the complexation of oligomers with solid alpha-cyclodextrin

POLYMER, 49(4), 985–991.

Suppression of Ge-O and Ge-N bonding at Ge-HfO2 and Ge-TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substrates: Integration issues Ge gate stacks into advanced devices

MICROELECTRONICS RELIABILITY, 48(3), 364–369.

Supercritical fluid technology for cleaning processing chambers and systems

Washington, DC: U.S. Patent and Trademark Office.

Structure-magnetic property correlations in the epitaxial FePt system

Applied Physics Letters, 92(10), 102504.

Spectroscopic analysis of the epitaxial CaO (111)-GaN (0002) interface

APPLIED PHYSICS LETTERS, 92(8).

Semiconductor manufacturing apparatus for modifying-in-film stress of thin films, and product formed thereby

Washington, DC: U.S. Patent and Trademark Office.

Semiconductor device-based sensors

Washington, DC: U.S. Patent and Trademark Office.

Self-assembled three-dimensional Cu-Ge nanoweb composite

NANOTECHNOLOGY, 19(13).

Nearly lattice-matched n, i, and p layers for InGaN p-i-n photodiodes in the 365-500 nm spectral range

APPLIED PHYSICS LETTERS, 92(10).

Nanoceria as antioxidant: Synthesis and biomedical applications

JOM, 60(3), 33–37.

Methods of forming pluralities of capacitors

Washington, DC: U.S. Patent and Trademark Office.

Methods of forming materials

Washington, DC: U.S. Patent and Trademark Office.

Methods of forming capacitor

Washington, DC: U.S. Patent and Trademark Office.

Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers

Washington, DC: U.S. Patent and Trademark Office.

Method of forming conductive metal silicides by reaction of metal with silicon

Washington, DC: U.S. Patent and Trademark Office.