Materials Science and Engineering

Dewetting of star nanogel/homopolymer blends from an immiscible homopolymer substrate

MACROMOLECULES, 37(21), 7857–7860.

Design of white light-emitting diodes using InGaN/AlInGaN quantum-well structures

APPLIED PHYSICS LETTERS, 84(5), 672–674.

Dependence of ferromagnetic properties on carrier transfer at GaMnN/GaN : Mg interface

APPLIED PHYSICS LETTERS, 85(17), 3809–3811.

Ca-doped lead zirconate titanate thin film capacitors on base metal nickel on copper foil

JOURNAL OF MATERIALS RESEARCH, 19(10), 2841–2848.

Bond strain and defects at Si-SiO2 and internal dielectric interfaces in high-k gate stacks

Lucovsky, G., & Phillips, J. C. (2004, November 10). JOURNAL OF PHYSICS-CONDENSED MATTER, Vol. 16, pp. S5139–S5151.

Atomistic simulation of the influence of pre-existing stress on the interpretation of nanoindentation data

JOURNAL OF MATERIALS RESEARCH, 19(11), 3172–3180.

A voltage controlled oscillator using Barium strontium titanate (BST) thin film varactor

RAWCON: 2004 IEEE RADIO AND WIRELESS CONFERENCE, PROCEEDINGS, pp. 91–94.

The effects of electric currents and fields on deformation in metals, ceramics, and ionic materials: An interpretive survey

MATERIALS AND MANUFACTURING PROCESSES, Vol. 19, pp. 587–610.

The design and characterization of a novel piezoelectric transducer-based linear motor

IEEE-ASME TRANSACTIONS ON MECHATRONICS, 9(2), 392–398.

Surface-roughness correlations in homoepitaxial growth of GaN(0001) films by NH3 supersonic jet epitaxy

JOURNAL OF APPLIED PHYSICS, 96(8), 4556–4562.

Support and particle size effects on direct NO decomposition over platinum

CATALYSIS TODAY, 96(1-2), 11–20.

Separate and independent control of interfacial band alignments and dielectric constants in transition metal rare earth complex oxides

Lucovsky, G., Zhang, Y., Whitten, J. L., Schlom, D. G., & Freeouf, J. L. (2004, April). MICROELECTRONIC ENGINEERING, Vol. 72, pp. 288–293.

Reductions in interface defects, D-it, by post oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices

Bae, C., & Lucovsky, G. (2004, April). MICROELECTRONIC ENGINEERING, Vol. 72, pp. 236–240.

Photoionization threshold of eumelanosomes determined using UV free electron laser - Photoelectron emission microscopy

Samokhvalov, A., Garguilo, J., Yang, W. C., Edwards, G. S., Nemanich, R. J., & Simon, J. D. (2004, October 21).

Novel methods of forming self-assembled nanostructured materials: Ni nanodots in Al2O3 and TiN matrices

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 4(7), 726–732.

Methods of making foamed materials of blended thermoplastic polymers using carbon dioxide

Washington, DC: U.S. Patent and Trademark Office.

Mass transfer in A1N crystal growth at high temperatures

JOURNAL OF CRYSTAL GROWTH, 264(1-3), 369–378.

In situ cleaning of GaN(0001) surfaces in a metalorganic vapor phase epitaxy environment

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 22(5), 2077–2082.

Improved charge neutralization method for depth profiling of bulk insulators using O-2(+) primary beam on a magnetic sector SIMS instrument

Pivovarov, A. L., Stevie, F. A., & Griffis, D. P. (2004, June 15). APPLIED SURFACE SCIENCE, Vol. 231, pp. 786–790.

Growth and characterization of ZnO thin films on GaN epilayers

JOURNAL OF ELECTRONIC MATERIALS, 33(7), 826–832.