Displaying works 161 - 180 of 204 in total
Sorted by most recent date added to the index first, which may not be the same as publication date order.
2001 journal article
Effect of hydrogen on true leakage current characteristics of (Pb,La)(Zr,Ti)O-3 thin-film capacitors with Pt- or Ir-based top electrodes
JOURNAL OF MATERIALS RESEARCH, 16(4), 1185–1189.
2001 journal article
Dynamic rheological behavior of DBS-induced poly(propylene glycol) physical gels
RHEOLOGICA ACTA, 40(1), 30–38.
2001 journal article
Ultraviolet raman study of A(1)(LO) and E-2 phonons in InxGa1-xN alloys
JOURNAL OF APPLIED PHYSICS, 89(1), 798–800.
2001 journal article
Time-dependent Si etch behavior and its effect on oxide/Si selectivity in CF4+D-2 electron cyclotron resonance plasma etching
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 19(3), 695–700.
2001 article
Self-healing on OPA self-assembled monolayers
Neves, B. R. A., Salmon, M. E., Troughton, E. B., & Russell, P. E. (2001, September). NANOTECHNOLOGY, Vol. 12, pp. 285–289.
2001 journal article
Raman spectroscopic characterization of diamond films grown in a low-pressure flat flame
JOURNAL OF CRYSTAL GROWTH, 226(1), 88–94.
2001 article
Predicted structure and electronic properties of individual carbon nanocones and nanostructures assembled from nanocones
Shenderova, O. A., Lawson, B. L., Areshkin, D., & Brenner, D. W. (2001, September). NANOTECHNOLOGY, Vol. 12, pp. 191–197.
2001 journal article
Polarization charges and polarization-induced barriers in AlxGa1-xN/GaN and InyGa1-yN/GaN heterostructures
APPLIED PHYSICS LETTERS, 79(18), 2916–2918.
2001 patent
Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates
Washington, DC: U.S. Patent and Trademark Office.
2001 journal article
Optical characterization of wide band gap amorphous semiconductors (a-Si : C : H): Effect of hydrogen dilution
JOURNAL OF APPLIED PHYSICS, 89(2), 1130–1137.
2001 journal article
Microstructure coarsening during static annealing of 60Sn4OPb solder joints: III intermetallic compound growth kinetics
JOURNAL OF ELECTRONIC MATERIALS, 30(10), 1308–1312.
2001 journal article
Microstructure coarsening during static annealing of 60Sn4OPb solder joints: II eutectic coarsening kinetics
JOURNAL OF ELECTRONIC MATERIALS, 30(10), 1303–1307.
2001 journal article
Microstructure coarsening during static annealing of 60Sn4OPb solder joints: I stereology
JOURNAL OF ELECTRONIC MATERIALS, 30(10), 1294–1302.
2001 journal article
Investigation and control of MOVPE growth by combined spectroscopic ellipsometry and reflectance-difference spectroscopy
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 184(1), 79–87.
2001 article
Imaging electron emission from diamond film surfaces: N-doped diamond vs. nanostructured diamond
DIAMOND AND RELATED MATERIALS, Vol. 10, pp. 1714–1718.
2001 journal article
Copper passivation of boron in Si1-xGex alloys and boron reactivation kinetics
Microelectronic Engineering, 55(1-4), 323–328.
2001 journal article
Polarization retention in SrBi2Ta2O9 thin films investigated at nanoscale
Journal of Applied Physics, 89(3), 1836–1843.
2001 journal article
Ordering of cylindrical microdomains in thin films of hybrid isotropic/liquid crystalline triblock copolymers
MACROMOLECULES, 34(2), 171–180.
2001 journal article
Microstructural changes due to heat-treatment of annealing and their effect on the creep behavior of self-reinforced silicon nitride ceramics
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 299(1-2), 141–151.
2001 journal article
Lead zirconate titanate thin films on base-metal foils: an approach for embedded high-permittivity passive components
Journal of the American Ceramic Society, 84(10), 2436–2438.
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