Materials Science and Engineering

Yttrium silicate formation on silicon: Effect of silicon preoxidation and nitridation on interface reaction kinetics

APPLIED PHYSICS LETTERS, 77(15), 2385–2387.

The planar Hall effect in MnSb films and MnSb-based multilayer structures grown on (111)B GaAs

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 218(2-3), 177–181.

Stability of low-temperature amorphous silicon thin film transistors formed on glass and transparent plastic substrates

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 18, pp. 683–689.

Plasma processed ultra-thin SiO2 interfaces far advanced silicon NMOS and PMOS devices: applications to Si-oxide Si oxynitride, Si-oxide Si nitride and Si-oxide transition metal oxide stacked gate dielectrics

Lucovsky, G., Yang, H. Y., Wu, Y., & Niimi, H. (2000, October 17). THIN SOLID FILMS, Vol. 374, pp. 217–227.

Orientation mediated self-assembled gallium phosphide islands grown on silicon

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 80(3), 555–572.

Limitations for aggressively scaled CMOS Si devices due to bond coordination constraints and reduced band offset energies at Si-high-k dielectric interfaces

Lucovsky, G., & Phillips, J. C. (2000, October 9). APPLIED SURFACE SCIENCE, Vol. 166, pp. 497–503.

Independent interface and bulk film contributions to reduction of tunneling currents in stacked oxide/nitride gate dielectrics with monolayer nitrided interfaces

Lucovsky, G., Niimi, H., Wu, Y., & Yang, H. (2000, June). APPLIED SURFACE SCIENCE, Vol. 159, pp. 50–61.

In situ monitoring of MOVPE growth by combined spectroscopic ellipsometry and reflectance-difference spectroscopy

Ebert, M., Bell, K. A., Yoo, S. D., Flock, K., & Aspnes, D. E. (2000, March 27). THIN SOLID FILMS, Vol. 364, pp. 22–27.

Grain boundaries in barium strontium titanate thin films: Structure, chemistry and influence on electronic properties

INTERFACE SCIENCE, 8(2-3), 209–221.

Formation of nano-crystalline Si by thermal annealing of SiOx, SiCx and SiOyCx amorphous alloys: model systems for advanced device processing

Journal of Non-Crystalline Solids, 266(2000 May), 1009–1014.

Barrier layer model determined by XPS data for tunneling current reductions at monolayer nitrided Si-SiO(2) interfaces

Niimi, H., Yang, H. Y., Lucovsky, G., Keister, J. W., & Rowe, J. E. (2000, October 9). APPLIED SURFACE SCIENCE, Vol. 166, pp. 485–491.

Application of constraint theory to Si-dielectric interfaces in a-Si: H and poly-Si thin film transistors (TFTs)

Journal of Non-Crystalline Solids, 266(2000 May), 1335–1339.

Zirconium mediated hydrogen outdiffusion from p-GaN

MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U491–496.

Thermoplastic elastomers: fundamentals and applications

Current Opinion in Colloid & Interface Science, 5(5-6), 334–341.

Thermally induced voltage offsets in Pb(Zr,Ti)O-3 thin films

APPLIED PHYSICS LETTERS, 77(19), 3036–3038.

Thermal stability study of self-assembled monolayers on mica

The internal pressurization creep of Zr alloys for spent-fuel dry storage feasibility

JOM-JOURNAL OF THE MINERALS METALS & MATERIALS SOCIETY, 52(9), 34–38.

The effects of interfacial sub-oxide transition regions and monolayer level nitridation on tunneling currents in silicon devices

IEEE ELECTRON DEVICE LETTERS, 21(2), 76–78.

The Oman upwelling zone during 1993, 1994 and 1995

DEEP-SEA RESEARCH PART II-TOPICAL STUDIES IN OCEANOGRAPHY, 47(7-8), 1227–1247.

Surface residue island nucleation in anhydrous HF/alcohol vapor processing of Si surfaces

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(9), 3512–3518.