Materials Science and Engineering

Observation of highly dispersive surface states on GaN(0001)1x1

Physical Review. B, Condensed Matter and Materials Physics, 59(24), R15586–15589.

Monolayer-level controlled incorporation of nitrogen in ultrathin gate dielectrics using remote plasma processing: Formation of stacked 'N-O-N' gate dielectrics

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(6), 2610–2621.

Low-temperature organometallic epitaxy and its application to superlattice structures in thermoelectrics

APPLIED PHYSICS LETTERS, 75(8), 1104–1106.

Low temperature aging embrittlement of CF-8 stainless steel

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 269(1-2), 186–196.

Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1836–1839.

Growth, doping and characterization of epitaxial thin films and patterned structures of AlN, GaN, and AlxGa1-xN

Hanser, A. D., Nam, O. H., Bremser, M. D., Thomson, D. B., Gehrke, T., Zheleva, T. S., & Davis, R. F. (1999, March). DIAMOND AND RELATED MATERIALS, Vol. 8, pp. 288–294.

Excitonic structure and absorption coefficient measurements of ZnO single crystal epitaxial films deposited by pulsed laser deposition

JOURNAL OF APPLIED PHYSICS, 85(11), 7884–7887.

Enhanced barrier performance of SiOx-modified polymer substrates: some morphological considerations

JOURNAL OF MATERIALS SCIENCE LETTERS, 18(4), 311–315.

Discrete element modeling of shock compression of hexagonal boron nitride powder with and without copper addition

JOURNAL OF MATERIALS PROCESSING TECHNOLOGY, 85(1-3), 109–114.

Defect energy levels in electron-irradiated and deuterium- implanted 6H silicon carbide

Physical Review. B, Condensed Matter and Materials Physics, 59(16), 10823–10829.

Charge redistribution at GaN-Ga2O3 interfaces: A microscopic mechanism for low defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces

Therrien, R., Niimi, H., Gehrke, T., Lucovsky, G., & Davis, R. (1999, September). MICROELECTRONIC ENGINEERING, Vol. 48, pp. 303–306.

Characterization of gradients in mechanical properties of SA-533B steel welds using ball indentation

INTERNATIONAL JOURNAL OF PRESSURE VESSELS AND PIPING, 76(6), 361–369.

Bonding constraint-induced defect formation at Si-dielectric interfaces and internal interfaces in dual-layer gate dielectrics

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1806–1812.

Biological uptake of influent organic matter as an electron donor for denitrification by activated sludge

BIOTECHNOLOGY TECHNIQUES, 13(6), 415–418.

Adhesion measurement of zirconium nitride and amorphous silicon carbide coatings to nickel and titanium alloys

SURFACE & COATINGS TECHNOLOGY, 114(2-3), 156–168.

Thermal mismatch stress relaxation via lateral epitaxy in selectively grown GaN structures

APPLIED PHYSICS LETTERS, 74(17), 2492–2494.

The role of Ag in the pulsed laser growth of YBCO thin films

JOURNAL OF APPLIED PHYSICS, 85(9), 6636–6641.

Simulation of void and oxygen precipitation processes during high temperature annealing of silicon wafers

JOURNAL OF APPLIED PHYSICS, 85(9), 6408–6414.

Scanning electron microscopy and cathodoluminescence study of the epitaxial lateral overgrowth (ELO) process for gallium nitride

Johnson, M. A. L., Yu, Z. H., Brown, J. D., El-Masry, N. A., Cook, J. W., & Schetzina, J. F. (1999, March). JOURNAL OF ELECTRONIC MATERIALS, Vol. 28, pp. 295–300.

Ranges of deposition temperatures applicable for metalorganic vapor phase epitaxy of GaN films via the technique of pendeo- epitaxy

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.37).