Materials Science & Engineering

Turbellarian infection of carangids.

Journal of Fish Diseases, 22(6), 489–491.

Pre-television stereotypes: Mexicans in US newsreels, 1919-1932

Critical Studies in Mass Communication, 16(4), 417–435.

P-methylstyrene

Polymer Data Handbook, 688–695.

Relaxation phenomena in GaN/ AlN/ 6H-SiC heterostructures

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.78).

Raman analysis and field emission study of ion beam etched diamond films

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(2), 700–704.

Non-destructive studies on tensile and fracture properties of molybdenum at low temperatures (148 to 423 K)

Journal of Materials Science, 34(7), 1497–1503.

Mesogel networks via selective midblock swelling of lamellar triblock copolymers

Langmuir, 15(23), 7886–7889.

Initial stages of yield in nanoindentation

Journal of Materials Research, 14(6), 2219–2227.

Gettering at vacancy and interstitial-rich regions in MeV ion implanted silicon

Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 70(1999), 247–252.

Ferroelectric films and devices

[Review of ]. Current Opinion in Solid State and Materials Science, 4(1), 39–44.

Dry ex situ cleaning processes for (0001)(Si) 6H-SiC surfaces

Journal of the Electrochemical Society, 146(7), 2648–2651.

Discrete element modeling of shock compression of polycrystalline copper

Physical Review. B, Condensed Matter and Materials Physics, 59(21), 13672–13680.

Device physics - Memories are made of ...

Nature, 401(6754), 658–659.

Determination of the critical layer thickness in the InGaN/GaN heterostructures

Applied Physics Letters, 75(18), 2776–2778.

Cubic GaN formation under nitrogen-deficient conditions

Applied Physics Letters, 74(17), 2465–2467.

Creep studies for Zircaloy life prediction in water reactors

JOM: the Journal of the Minerals, Metals & Materials Society, 51(10), 32–39.

Cobalt suicide formation on 6H silicon carbide

Journal of Synchrotron Radiation, 6(1999 May 1), 188–189.

Band offsets for ultrathin SiO2 and Si3N4 films on Si(111) and Si(100) from photoemission spectroscopy

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1831–1835.

Thermophysical properties of alpha-tungsten carbide

Journal of the American Ceramic Society, 82(1), 129–135.