Materials Science and Engineering

Photo-emission electron microscopy (PEEM) of cleaned and etched 6H-SiC(0001)

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, Vol. 338-3, pp. 353–356.

Pendeo-epitaxy (TM) process for aluminum gallium nitride thin films on silicon carbide substrates via metalorganic chemical vapor deposition

Materials Science Forum, 338(3), 1491–1494.

Microscopic model for enhanced dielectric constants in low concentration SiO2-rich noncrystalline Zr and Hf silicate alloys

APPLIED PHYSICS LETTERS, 77(18), 2912–2914.

Method for water vapor enhanced charged-particle-beam machining

Washington, DC: U.S. Patent and Trademark Office.

Lateral- and pendeo-epitaxial growth and defect reduction in GaN thin films

Materials Science Forum, 338(3), 1471–1476.

Influence of annealing conditions on dopant activation of Si+ and Mg+ implanted GaN

Materials Science Forum, 338(3), 1615–1618.

Growth and microstructure of InxGa1-xN films grown on SiC substrates via low pressure metalorganic vapor phase epitaxy

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 3(3), 163–171.

Effects of a Ta interlayer on the phase transition of TiSi2 on Si(111)

Journal of Applied Physics, 88(5), 2467–2471.

Effect of Ar+ ion beam in the process of plasma surface modification of PET films

JOURNAL OF APPLIED POLYMER SCIENCE, 77(8), 1679–1683.

Dry etching and metallization schemes in a GaN/SiC heterojunction device process

Materials Science Forum, 338(3), 1049–1052.

Defect-dependent elasticity: Nanoindentation as a probe of stress state

JOURNAL OF MATERIALS RESEARCH, 15(8), 1693–1701.

Characterization of dielectrics on the 'tips of needles'

Electrochemistry, 30(4), 210–215.

Tungsten chemical vapor deposition using tungsten hexacarbonyl: microstructure of as-deposited and annealed films

THIN SOLID FILMS, 370(1-2), 114–121.

Surface-induced optical anisotropy of Si and Ge

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 18, pp. 2229–2231.

Structural changes in poly(ethylene terephthalate) induced by mechanical milling

POLYMER, 41(19), 7147–7157.

Stereo pair displays of surface range images

Russ, J. C., & Russ, J. C. (2000, August).

Schottky barrier height and electron affinity of titanium on AIN

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 18, pp. 2082–2087.

Intrinsic limitations on ultimate device performance and reliability at (i) semiconductor-dielectric interfaces and (ii) internal interfaces in stacked dielectrics

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(4), 2179–2186.

High-resolution spectroscopy with reciprocal-space analysis: Application to isotopically pure Si

Yoo, S. D., Aspnes, D. E., Lastras-Martinez, L. F., Ruf, T., Konuma, M., & Cardona, M. (2000, July). PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 220, pp. 117–125.

Exploring the effects of tensile and compressive strain on two-dimensional electron gas properties within InGaN quantum wells

APPLIED PHYSICS LETTERS, 77(1), 97–99.