Displaying works 181 - 200 of 240 in total
Sorted by most recent date added to the index first, which may not be the same as publication date order.
1998 journal article
Interface formation and thermal stability of advanced metal gate and ultrathin gate dielectric layers
Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(4), 2154–2158.
1998 journal article
Heterointerface dipoles: Applications to (a) Si-SiO2, (b) nitrided Si-N-SiO2, and (c) SiC-SiO2 interfaces
Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(4), 2191–2198.
1998 journal article
Electrical properties of (Ba, Sr)TiO3 thin films prepared by liquid delivery MOCVD
Journal of the Korean Physical Society, 32 pt.4(suppl.), 1652–1656.
1998 article
Differences between silicon oxycarbide regions at SiC-SiO(2) prepared by plasma-assisted oxidation and thermal oxidations
Lucovsky, G., Niimi, H., Golz, A., & Kurz, H. (1998, January). APPLIED SURFACE SCIENCE, Vol. 123, pp. 435–439.
1998 journal article
Dielectric properties and microstructure of thin BST films
Journal of the Korean Physical Society, 32 pt.4(suppl.), 1591–1594.
1998 journal article
Coupled electron-hole dynamics at the Si/SiO2 interface
PHYSICAL REVIEW LETTERS, 81(19), 4224–4227.
1998 article
Chemically and geometrically enhanced focused ion beam micromachining
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 16, pp. 2494–2498.
1998 journal article
Cathodoluminescence measurements of suboxide band-tail and Si dangling bond states at ultrathin Si-SiO2 interfaces
Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(4), 2177–2181.
1998 journal article
Surface melting in the heteroepitaxial nucleation of diamond on Ni
JOURNAL OF CRYSTAL GROWTH, 187(1), 81–88.
1998 journal article
Secondary electron imaging as a two-dimensional dopant profiling technique: Review and update
Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(1), 362–366.
1998 journal article
Real-time monitoring of steady-state pulsed chemical beam epitaxy by p-polarized reflectance
JOURNAL OF CRYSTAL GROWTH, 183(3), 323–337.
1998 journal article
Pure and mixed gas acetone/nitrogen permeation properties of polydimethylsiloxane [PDMS]
JOURNAL OF POLYMER SCIENCE PART B-POLYMER PHYSICS, 36(2), 289–301.
1998 journal article
Phase separation in InGaN grown by metalorganic chemical vapor deposition
APPLIED PHYSICS LETTERS, 72(1), 40–42.
1998 article
Optical approaches for controlling epitaxial growth
Aspnes, D. E., & Dietz, N. (1998, June). APPLIED SURFACE SCIENCE, Vol. 130, pp. 367–376.
1998 journal article
Isolation techniques and electrical characterization of single grain boundaries of Bi2Sr2CaCu2O2 high-temperature superconductor
PHYSICA C, 295(3-4), 225–234.
1998 journal article
Intrinsic exciton transitions in GaN
JOURNAL OF APPLIED PHYSICS, 83(1), 455–461.
1998 journal article
Growth of MoxN films via chemical vapor deposition of MoCl5 and NH3
SURFACE & COATINGS TECHNOLOGY, 102(3), 256–259.
1998 article
Factors affecting two-dimensional dopant profiles obtained by transmission electron microscopy of etched p-n junctions in Si
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 16, pp. 471–475.
1998 journal article
Electrorheology of a zeolite silicone oil suspension with dc and ac fields
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 31(8), 960–963.
1998 article
Electron emission properties of crystalline diamond and III-nitride surfaces
Nemanich, R. J., Baumann, P. K., Benjamin, M. C., Nam, O. H., Sowers, A. T., Ward, B. L., … Davis, R. F. (1998, June). APPLIED SURFACE SCIENCE, Vol. 130, pp. 694–703.
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