Materials Science and Engineering

Silicon oxide/silicon nitride dual-layer films: a stacked gate dielectric for the 21st century

Lucovsky, G. (1999, September 1). JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 254, pp. 26–37.

Selective area metalorganic molecular-beam epitaxy of GaN and the growth of luminescent microcolumns on Si/SiO2

APPLIED PHYSICS LETTERS, 75(4), 463–465.

Reaction/annealing pathways for forming ultrathin silicon nitride films for composite oxide-nitride gate dielectrics with nitrided crystalline silicon-dielectric interfaces for application in advanced complementary metal-oxide-semiconductor devices

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 17, pp. 1340–1351.

Planarization processes and applications - II. B2O3/P2O5 doped GeO2-SiO2 classes

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(10), 3872–3885.

Planarization processes and applications - I. Undoped GeO2-SiO2 glasses

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(10), 3860–3871.

Phase separation and ordering coexisting in InxGa1-xN grown by metal organic chemical vapor deposition

APPLIED PHYSICS LETTERS, 75(15), 2202–2204.

Pendeo-epitaxy versus lateral epitaxial overgrowth of GaN: A comparative study via finite element analysis

Physica Status Solidi. A, Applications and Materials Science, 176(1), 545–551.

Oxygen precipitation behavior in 300 mm polished Czochralski silicon wafers

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(10), 3807–3811.

Oxide precipitate-induced dislocation generation in heavily boron-doped Czochralski silicon

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(9), 3461–3465.

Modification of a thermoplastic elastomer gel through the addition of an endblock-selective homopolymer

JOURNAL OF POLYMER SCIENCE PART B-POLYMER PHYSICS, 37(15), 1863–1872.

Microstructure, electrical properties, and thermal stability of Ti-based ohmic contacts to n-GaN

JOURNAL OF MATERIALS RESEARCH, 14(3), 1032–1038.

Method for water vapor enhanced charged-particle-beam machining

Washington, DC: U.S. Patent and Trademark Office.

Interaction of Cu and Cu3Ge thin films with Si1-xGex alloys

APPLIED PHYSICS LETTERS, 75(12), 1739–1741.

Homoepitaxial GaN layers studied by low-energy electron microscopy, atomic force microscopy and transmission electronmicroscopy

Physica Status Solidi. A, Applications and Materials Science, 176(1), 469–473.

Ferroelectric properties of new chemical solution derived SBT thin films for non-volatile memory devices

JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 16(1-2), 57–63.

Electronic structure of the 0.88-eV luminescence center in electron-irradiated gallium nitride

Physical Review. B, Condensed Matter and Materials Physics, 60(3), 1746–1751.

Effects of graphite content on the morphology and barrier properties of poly(vinylidene fluoride) composites

POLYMER, 40(22), 6023–6029.

Effect of dynamic strain aging on mechanical and fracture properties of A516Gr70 steel

INTERNATIONAL JOURNAL OF PRESSURE VESSELS AND PIPING, 76(14-15), 945–953.

Chemical vapor cleaning of 6H-SiC surfaces

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(9), 3448–3454.

Cathodoluminescence spectroscopy of nitrided SiO2-Si interfaces

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 17, pp. 1258–1262.