Displaying works 121 - 140 of 204 in total
Sorted by most recent date added to the index first, which may not be the same as publication date order.
2001 journal article
Self-assembled AlInGaN quaternary superlattice structures
APPLIED PHYSICS LETTERS, 79(11), 1616–1618.
2001 journal article
Seeding effect on micro- and domain structure of sol-gel-derived PZT thin films
MATERIALS LETTERS, 50(4), 219–224.
2001 journal article
Review of pendeo-epitaxial growth and characterization of thin films of GaN and AlGaN alloys on 6H-SiC(0001) and Si(111) substrates
MRS Internet Journal of Nitride Semiconductor Research, 6(14), 1–16.
2001 journal article
Platinum-containing hyper-cross-linked polystyrene as a modifier-free selective catalyst for L-sorbose oxidation
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 123(43), 10502–10510.
2001 article
Physical and electrical properties of noncrystalline Al2O3 prepared by remote plasma enhanced chemical vapor deposition
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 19, pp. 1353–1360.
2001 journal article
O-18 study of the oxidation of reactively sputtered Ti1-xAlxN barrier
JOURNAL OF MATERIALS RESEARCH, 16(9), 2591–2599.
2001 journal article
Nitrogen incorporation in ultrathin gate dielectrics: A comparison of He/N2O and He/N-2 remote plasma processes
JOURNAL OF APPLIED PHYSICS, 90(6), 3100–3108.
2001 journal article
Near-edge X-ray absorption fine structure (NEXAFS) microscopy of a polycarbonate/poly (acrylonitrile/butadiene/styrene) blend
JOURNAL OF POLYMER SCIENCE PART B-POLYMER PHYSICS, 39(5), 531–535.
2001 journal article
Minority-carrier diffusion length in a GaN-based light-emitting diode
APPLIED PHYSICS LETTERS, 79(10), 1567–1569.
2001 patent
Methods of raising reflow temperature of glass alloys by thermal treatment in steam, and microelectronic structures formed thereby
Washington, DC: U.S. Patent and Trademark Office.
2001 patent
Methods of forming a plurality of semiconductor layers using spaced trench arrays
Washington, DC: U.S. Patent and Trademark Office.
2001 patent
Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby
Washington, DC: U.S. Patent and Trademark Office.
2001 patent
Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby
Washington, DC: U.S. Patent and Trademark Office.
2001 article
Metalorganic chemical vapor deposition Pb(Zr,Ti)O-3 and selected lower electrode structures as a pathway to integrated piezoelectric microelectromechanical systems
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 19, pp. 1833–1840.
2001 journal article
Mechanical properties of nanocrystalline and epitaxial TiN films on (100) silicon
JOURNAL OF MATERIALS RESEARCH, 16(9), 2733–2738.
2001 journal article
Magnetic properties of self-assembled nanoscale La2/3Ca1/3MnO3 particles in an alumina matrix
APPLIED PHYSICS LETTERS, 79(9), 1327–1329.
2001 journal article
Lateral epitaxy and dislocation density reduction in selectively grown GaN structures
JOURNAL OF CRYSTAL GROWTH, 222(4), 706–718.
2001 review
Ion implantation into gallium nitride
[Review of ]. PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 351(5), 349–385.
2001 article
Heavy-ion-induced breakdown in ultra-thin gate oxides and high-k dielectrics
Massengill, L. W., Choi, B. K., Fleetwood, D. M., Schrimpf, R. D., Galloway, K. F., Shaneyfelt, M. R., … Lucovsky, G. (2001, December). IEEE TRANSACTIONS ON NUCLEAR SCIENCE, Vol. 48, pp. 1904–1912.
2001 journal article
Gas permeation properties of poly(1,1 '-dihydroperfluorooctyl acrylate), poly(1,1 '-dihydroperfluorooetyl methacrylate), and poly(styrene)-b-poly(1,1 '-dihydroperfluorooctyl acrylate) block copolymers
MACROMOLECULES, 34(16), 5611–5619.
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