Displaying works 81 - 91 of 91 in total
Sorted by most recent date added to the index first, which may not be the same as publication date order.
1996 patent
Method and apparatus for nondisruptively measuring line impedance at frequencies which are relatively close to the line frequency
Washington, DC: U.S. Patent and Trademark Office.
1996 journal article
A novel fuzzy friction compensation approach to improve the performance of a DC motor control system
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 43(1), 113–120.
1996 patent
Apparatus and method for echo characterization of a communication channel
Washington, DC: U.S. Patent and Trademark Office.
1996 patent
Thin film transistor with large grain size DRW offset region and small grain size source and drain and channel regions
Washington, DC: U.S. Patent and Trademark Office.
1996 article
Time of outage restoration analysis in distribution systems
Chow, M. Y., Taylor, L. S., & Chow, M. S. (1996, July). IEEE TRANSACTIONS ON POWER DELIVERY, Vol. 11, pp. 1652–1658.
1996 article
Trace cache: A low latency approach to high bandwidth instruction fetching
PROCEEDINGS OF THE 29TH ANNUAL IEEE/ACM INTERNATIONAL SYMPOSIUM ON MICROARCHITECTURE - MICRO-29, pp. 24–34.
1996 article
Assigning confidence to conditional branch predictions
PROCEEDINGS OF THE 29TH ANNUAL IEEE/ACM INTERNATIONAL SYMPOSIUM ON MICROARCHITECTURE - MICRO-29, pp. 142–152.
1996 article
Sub-half micron elevated source/drain NMOSFETs by low temperature selective epitaxial deposition
RAPID THERMAL AND INTEGRATED PROCESSING V, Vol. 429, pp. 343–347.
1996 chapter
Stimulated emission and gain measurements from InGaN/GaN heterostructures
In III-V nitrides: Symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.(Materials Research Society symposia proceedings ; v. 449) (pp. 1209–1214). Pittsburgh, Pa.: Materials Research Society.
1996 chapter
Quantum well heterostructure lasers
In M. R. Brozel & G. E. Stillman (Eds.), Properties of gallium arsenide (3rd ed.) (Datareviews series, no. 16) (pp. 887–905). INSPEC.
Ed(s): . M. R. Brozel & G. Stillman
1996 conference paper
Growth of bulk AIN and GaN single crystals by sublimation
III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society symposia proceedings ; v. 449), 41–46. Pittsburgh, Pa.: Materials Research Society.
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