Displaying works 181 - 200 of 239 in total
Sorted by most recent date added to the index first, which may not be the same as publication date order.
1999 journal article
Quality of selective silicon epitaxial films deposited using disilane and chlorine
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(6), 2337–2343.
1999 journal article
Process routes for low defect-density GaN on various substrates employing pendeo-epitaxial growth techniques
MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.9).
1999 journal article
Pendeo-epitaxy: A new approach for lateral growth of gallium nitride structures
MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.38).
1999 journal article
Pendeo-epitaxy of gallium nitride and aluminum nitride films and heterostructures on silicon carbide substrate
MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.2).
1999 journal article
Oxygen diffusion in heavily antimony-, arsenic-, and boron-doped Czochralski silicon wafers
APPLIED PHYSICS LETTERS, 74(24), 3648–3650.
1999 journal article
Optical and structural studies of Ge nanocrystals embedded in AlN matrix fabricated by pulsed laser deposition
APPLIED PHYSICS LETTERS, 75(9), 1222–1224.
1999 journal article
Optical absorption, Raman, and photoluminescence excitation spectroscopy of inhomogeneous InGaN films
MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.22).
1999 article
Investigation of thickness effects on AlN coated metal tips by in situ I-V measurement
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 17, pp. 632–634.
1999 article
Imaging electron emission from diamond and III-V nitride surfaces with photo-electron emission microscopy
Nemanich, R. J., English, S. L., Hartman, J. D., Sowers, A. T., Ward, B. L., Ade, H., & Davis, R. F. (1999, May). APPLIED SURFACE SCIENCE, Vol. 146, pp. 287–294.
1999 journal article
Hydrogen plasma removal of post-RIE residue for backend processing
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(6), 2318–2321.
1999 journal article
Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - II. Role of implanted arsenic
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(8), 3079–3086.
1999 journal article
Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - I. Role of implanted BF2
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(8), 3070–3078.
1999 journal article
Grafted polymer tail loop mixtures differing in chain length
POLYMER, 40(18), 5207–5211.
1999 journal article
Epitaxial lateral overgrowth of GaN on SiC and sapphire substrates
MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.3).
1999 journal article
Electrostatic measurement of plasma plume characteristics in pulsed laser evaporated carbon
JOURNAL OF APPLIED PHYSICS, 86(5), 2865–2871.
1999 article
Effect of nitrogen incorporation on electron emission from chemical vapor deposited diamond
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 17, pp. 734–739.
1999 journal article
Effect of heavy boron doping on oxide precipitate growth in Czochralski silicon
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(6), 2239–2244.
1999 article
Effect of composition on the morphology and electro-optical properties of physically crosslinked liquid crystals
LIQUID CRYSTAL MATERIALS AND DEVICES, Vol. 559, pp. 177–182.
1999 journal article
Diamond films and composites on cobalt-chromium alloys
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 58(3), 251–257.
1999 journal article
Characterization of Be-implanted GaN annealed at high temperatures
MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.17).
Citation Index includes data from a number of different sources. If you have questions about the sources of data in the Citation Index or need a set of data which is free to re-distribute, please contact us.
Certain data included herein are derived from the Web of Science© and InCites© (2024) of Clarivate Analytics. All rights reserved. You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.