Displaying works 201 - 220 of 239 in total
Sorted by most recent date added to the index first, which may not be the same as publication date order.
1999 journal article
Ball indentation studies on the effect of aging on mechanical behavior of alloy 625
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 264(1-2), 159–166.
1999 journal article
Accommodation of nonstoichiometry in (100) fiber-textured (BaxSr1-x)Ti1-yO3+z thin films grown by chemical vapor deposition
APPLIED PHYSICS LETTERS, 74(17), 2432–2434.
1999 journal article
Absorption coefficient and refractive index of GaN, AlN and AlGaN alloys
MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.2).
1999 journal article
A-methylstyrene
Polymer Data Handbook, 680–687.
1999 journal article
A critical comparison between MOVPE and MBE growth of III-V nitride semiconductor materials for opto-electronic device applications
MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.10).
1999 journal article
Study of thin films polarity of group III nitrides
MRS Internet Journal of Nitride Semiconductor Research, 4S1(G6.46).
1999 journal article
Studies of hydrogen-induced degradation processes in SrBi2Ta2O9 ferroelectric film-based capacitors
APPLIED PHYSICS LETTERS, 74(8), 1162–1164.
1999 journal article
Simulation of metallic impurity gettering in silicon by MeV ion implantation
Nuclear Instruments & Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors, and Associated Equipment, 148(1-4), 322–328.
1999 journal article
Phonon dynamics and lifetimes of AlN and GaN crystallites
MRS Internet Journal of Nitride Semiconductor Research, 4S1(G6.65).
1999 journal article
Ni/Si-based contacts to GaN: Thermally activated structural transformations leading to ohmic behavior
MRS Internet Journal of Nitride Semiconductor Research, 4S1(G9.9).
1999 journal article
Crystal structure and defects in nitrogen-deficient GaN
MRS Internet Journal of Nitride Semiconductor Research, 4S1(G6.43).
1999 journal article
Combinatorial peptide on-resin analysis: optimization of static nanoelectrospray ionization technique for sequence determination
JOURNAL OF PEPTIDE RESEARCH, 53(3), 234–243.
1999 journal article
Bias dependent contrast mechanisms in EBIC images of MOS capacitors
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(4), 1529–1535.
1999 journal article
The influences of reactant composition and substrate material on the combustion synthesis of diamond
JOURNAL OF MATERIALS RESEARCH, 14(1), 259–269.
1999 journal article
Mechanical properties of nanotubule fibers and composites determined from theoretical calculations and simulations (vol 36, pg 1, 1998)
Carbon, 37(2), 347.
1999 patent
Method of reducing the viscosity of a black liquor using thiocyanate salt
Washington, DC: U.S. Patent and Trademark Office.
1999 journal article
Improvement of gate dielectric reliability for p plus poly MOS devices using remote PECVD top nitride deposition ultra-thin (2.4-6 nm) gate oxides
MICROELECTRONICS RELIABILITY, 39(3), 365–372.
1999 journal article
Evidence for localized Si-donor state and its metastable properties in AlGaN
APPLIED PHYSICS LETTERS, 74(25), 3833–3835.
1999 journal article
Effects of oxygen during selective silicon epitaxial growth using disilane and chlorine
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(6), 2344–2352.
1999 journal article
Effect of growth temperature on point defect density of unintentionally doped GaN grown by metalorganic chemical vapor deposition and hydride vapor phase epitaxy
JOURNAL OF APPLIED PHYSICS, 86(1), 281–288.
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