Works Published in 2001
Displaying works 81 - 100 of 137 in total
Sorted by most recent date added to the index first, which may not be the same as publication date order.
2001 journal article
Load characterization of high displacement piezoelectric actuators with various end conditions
SENSORS AND ACTUATORS A-PHYSICAL, 94(1-2), 19–24.
author keywords: THUNDER transducers; piezoelectric; actuator; ferroelectric; PZT; unimorph
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018
2001 chapter
An adaptive error control mechanism for wireless ATM
In Networking-ICN 2001: First international conference, Colmar, France, July 9-13, 2001: Proceedings (Vol. 2093, pp. 449–458).
TL;DR:
An adaptive error control coding feedback mechanism to alleviate the problem of the high and variable bit error rate of the wireless network in wireless ATM networks is provided.
(via Semantic Scholar)
Source: NC State University Libraries
Added: August 6, 2018
2001 journal article
Room temperature ferromagnetic properties of (Ga, Mn)N
APPLIED PHYSICS LETTERS, 79(21), 3473–3475.
Source: Web Of Science
Added: August 6, 2018
2001 journal article
Strain-induced piezoelectric field effects on light emission energy and intensity from AlInGaN/InGaN quantum wells
APPLIED PHYSICS LETTERS, 79(23), 3803–3805.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
2001 journal article
Room temperature magnetic (Ga,Mn)N: a new material for spin electronic devices
MATERIALS LETTERS, 51(6), 500–503.
author keywords: magnetic; semiconductors; Ga-Mn-N
Source: Web Of Science
Added: August 6, 2018
2001 journal article
The future of power semiconductor device technology
PROCEEDINGS OF THE IEEE, 89(6), 822–832.
author keywords: insulated gate bipolar transistors; MOSFETs; power electronics; power integrated circuits; power rectifiers; power semi-conductor devices; Schottky diodes; silicon carbide; smart power technology; thyristors
TL;DR:
Recently, significant improvements in the performance of silicon-power MOSFETs has been achieved by using innovative vertical structures with charge coupled regions, and silicon IGBTs continue to dominate the medium- and high-voltage application space sue to scaling of their voltage ratings and refinements to their gate structure achieve by using very large scale integration (VLSI) technology and trench gate regions.
(via Semantic Scholar)
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science)
Source: Web Of Science
Added: August 6, 2018
2001 journal article
Optical metastability of subband gap (2.2 eV) yellow luminescence in GaN
APPLIED PHYSICS LETTERS, 79(3), 281–283.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
2001 journal article
Fiber length measurement by image processing
TEXTILE RESEARCH JOURNAL, 71(10), 905–910.
TL;DR:
The accuracy and precision of image processing applications compared with existing methods of HVI, AFIS, and hand measurements are reported on.
(via Semantic Scholar)
UN Sustainable Development Goal Categories
2. Zero Hunger
(Web of Science)
13. Climate Action
(Web of Science)
Source: Web Of Science
Added: August 6, 2018
2001 conference paper
Smart sensors to monitor warp tension and breaks on a loom
Source: NC State University Libraries
Added: August 6, 2018
2001 article
Relaxation of InGaN thin layers observed by x-ray and transmission electron microscopy studies
Liliental-Weber, Z., Benamara, M., Washburn, J., Domagala, J. Z., Bak-Misiuk, J., Piner, E. L., … Bedair, S. M. (2001, April). JOURNAL OF ELECTRONIC MATERIALS, Vol. 30, pp. 439–444.
author keywords: InGaN; strained layer; relaxed layer; planar defects; TEM; x-rays
Source: Web Of Science
Added: August 6, 2018
2001 journal article
Quantized vibrational modes of nanospheres and nanotubes in the elastic continuum model
Journal of Applied Physics, 89(9), 5107–5111.
Sources: Web Of Science, Crossref
Added: August 6, 2018
2001 article
Investigation into intermodulation distortion in HEMTs using a quasi-2-D physical model
Rudge, P. J., Miles, R. E., & Steer, M. B. (2001, December). IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, Vol. 49, pp. 2315–2321.
author keywords: intermodulation distortion; linearity; microwave power FET amplifiers; MODFET power amplifiers; MODFETs; semiconductor device modeling
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
9. Industry, Innovation and Infrastructure
(Web of Science)
Source: Web Of Science
Added: August 6, 2018
2001 article
High-field electron transport in nanoscale group-III nitride devices
Komirenko, S. M., Kim, K. W., Kochelap, V. A., & Stroscio, M. A. (2001, November). PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol. 228, pp. 593–597.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
2001 journal article
Group-III nitrides hot electron effects in moderate electric fields
Physica Status Solidi. B, Basic Solid State Physics, 228(2), 571–574.
Source: NC State University Libraries
Added: August 6, 2018
2001 journal article
Generation of coherent confined LO phonons under the drift of two-dimensional electrons
Physical Review B, 63(16).
UN Sustainable Development Goal Categories
9. Industry, Innovation and Infrastructure
(Web of Science)
Sources: Web Of Science, Crossref
Added: August 6, 2018
2001 journal article
Flow structures and particle deposition patterns in double-bifurcation airway models. Part 1. Air flow fields
JOURNAL OF FLUID MECHANICS, 435, 25–54.
TL;DR:
The theory, model geometries, and air flow results are provided and detailed results for bifurcating lung airways are most useful in the development of global algebraic lung models.
(via Semantic Scholar)
UN Sustainable Development Goal Categories
3. Good Health and Well-being
(Web of Science)
Source: Web Of Science
Added: August 6, 2018
2001 journal article
Alkaline depolymerization of poly(trimethylene terephthalate)
JOURNAL OF APPLIED POLYMER SCIENCE, 82(1), 99–107.
author keywords: poly(trimethylene terephthalate) (PTT); alkaline depolymerization; rate constant; ethereal solvents
UN Sustainable Development Goal Categories
6. Clean Water and Sanitation
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
2001 journal article
Photoluminescence and electrical characteristics of the two-dimensional electron gas in Si delta-doped GaN layers
APPLIED PHYSICS LETTERS, 78(12), 1688–1690.
Source: Web Of Science
Added: August 6, 2018
2001 article
N and P metal oxide semiconductor field effect transistor characteristics of hafnium-doped SiO2 gate dielectrics
Misra, V., Kulkarni, M., & Zhong, H. C. (2001, December). JOURNAL OF ELECTRONIC MATERIALS, Vol. 30, pp. 1499–1505.
author keywords: hafnium-doped SiO2 films; interfacial properties; NMOS; PMOS; MOS-capacitor
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018
2001 article
Electrical properties of Ru and RuO2 gate electrodes for Si-PMOSFET with ZrO2 and Zr-silicate dielectrics
Zhong, H. C., Heuss, G., Suh, Y. S., Misra, V., & Hong, S. N. (2001, December). JOURNAL OF ELECTRONIC MATERIALS, Vol. 30, pp. 1493–1498.
author keywords: Ru; RuO2; ZrO2; Zr-silicate; MOS; dielectrics; gate electrodes
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018
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